31 results about "Crystal oven" patented technology

The invention relates to the field of oriented silicon steel plate manufacture, in particular to a method for preparing special magnesium borate for oriented silicon steel. The method solves the problems of poor adhesion, dispersibility and electromagnetic performance and the like of the conventional boron aid. The method comprises the following steps of: (1) pouring aqueous solution of magnesium bicarbonate and boric acid in a ratio into a reaction kettle; (2) performing sedimentation treatment on the mixed solution; (3) then conveying the sediment into a pyrolysis tank, adding finished magnesium borate crystal seeds and silane coupling agent into the pyrolysis tank, and producing a mixture of nano magnesium carbonate and metaboric acid by using a liquid phase precipitation method; (4) filter-pressing the pyrolysis product to obtain filter cakes; (5) treating the filter cakes in a high-temperature crystal oven to form nano magnesium borate powder with complete crystal; and (6) grading the material discharged out of the high-temperature crystal oven with jet milling to obtain a screened substance of less than or equal to 320 meshes. All indexes of the special magnesium borate are superior to that of the primary product, and in particular, the adhesion, dispersibility and electromagnetic performance are remarkably improved, and the quality of the oriented silicon steel plate is improved; and the method has the advantages of simple production process, lower cost and no three-waste pollution.

The present invention provides an optical resonator. The optical resonator comprises a housing consisting of a main body portion and a rear end cover, wherein the main body portion has a cavity, and the rear end cover is arranged on the main body portion in a mode for sealing an opening at the rear side of the cavity; a red copper crystal oven with nonlinear crystal arranged in the cavity; and piezoelectric ceramics and an output mirror arranged in the rear end cover, wherein the nonlinear crystal, the piezoelectric ceramics and an optical path of the output mirror communicate in order and arearranged in the same straight line. The objective of the invention is to provide an optical resonator capable of reducing phase jittering and improving the phase stability.

The invention relates to an energy-saving process for producing layered crystal sodium disilicate in the field of the process for producing a washing assistant. The process is as follows: (1) the dust content of coal gas is controlled to less than or equal to 50 mg/m<3>, the temperature is controlled to between 30 and 40 DEG C, and the pressure is controlled to between 0.2 and 0.3 MPa; (2) the concentration of a solution is controlled to between 40 and 45 percent, and settled dreg is filtered after dissolution is over; (3) a module adjusting agent is added into the mixture to adjust the mixture to the required module, the mixture is subjected to spray drying and dehydration, and the moisture mass ratio of the produced instant sodium silicate is between 9 and 12 percent; and (4) the temperature of a high-temperature crystal oven is between 600 and 900 DEG C, the gas exhaust temperature is between 500 and 600 DEG C, the crystallization time is kept to between 8 and 15 minutes, and high-temperature crystalline substances which are discharged from the crystal oven are crushed and cooled and the granularity of the high-temperature crystalline substances is controlled to less than 100 meshes. The process adopts the method of replacing high-cost fuel by low-cost fuel to reduce the production cost, utilizes recovery of waste heat of the crystal oven to save the energy and reduce exhaust emission and the cost, and technically reaches the domestic advanced level.

The invention discloses a transitional connection method for a heating rod and a water cooling electrode of a crystal growing furnace. The transitional connection method is characterized in that two ends of the heating rod are respectively connected with a refractory metal rod with a larger cross section, and the refractory metal rods with the larger cross section are fixed with the water cooling electrode. When the transitional connection method is adopted, reliable contact can be ensured, electric clearance can be prevented from arc striking, and the thermal damage to the electrode caused by the direct contact of a thermal load of the high-temperature heating rod with the electrode can also be avoided; and the transitional connection method is applicable to various low-voltage high-power tungsten resistance furnaces, such as a sapphire crystal growing furnace and a monocrystalline silicon crystal growing furnace.

The invention belongs to the field of sapphire preparation, and provides a method for controlling the kyropoulos sapphire molten crystal vaccination state based on random distribution. The method comprises the following steps: determining and controlling the sapphire molten crystal vaccination state by utilizing random distribution control; acquiring and processing the sapphire molten crystal surface image, establishing a model which takes the primary function approximate weight corresponding to the molten crystal surface image corrugated information distribution, input voltage change ratio, voltage tuning ratio, cooling water hydraulic pressure and cooling water temperature of a power supply cabinet as input; predicting errors by the model to constantly correct the input information; andtracking the molten crystal surface image corrugated information distribution when vaccination is expected regularly to control the sapphire molten crystal vaccination state. According to the method,after a crystal furnace is heated, the molten crystal in a proper vaccination state is determined and kept by utilizing the molten crystal image distribution information, the vaccination time determined by artificial observation and experience is not required, so that labor resource is reduced, and the vaccination success rate is improved. The method is applicable to large-scale production of sapphire crystal.

The invention discloses a portable fiber radiation thermometric indicator. The portable fiber radiation thermometric indicator is composed of an optical system and a circuit system, and is characterized in that the optical system is formed by connecting a large-power fiber coupler with an energy transfer fiber, and the circuit system comprises a photoelectric detector, a front amplifier, an AD sampling module, a signal processing module, a display module, a button input portion, a digital-to-analog conversion module and an electric current loop. The coupling wavelength scope of the large-power fiber coupler employed by the portable fiber radiation thermometric indicator is ultra-wide, and the portable fiber radiation thermometric indicator is suitable for measurement of a crystal furnace heat field and is simple, convenient and quite practical.

The invention discloses a thulium-doped bismuth silicon germanate laser crystal and a preparation method thereof. The molecular formula of the material is (TmxBi1-x)4(GeySi1-y)3O12, the value range of x is 0.005-0.15, and the value range of y is 0.1-0.9. The method comprises the following steps: mixing the raw material powder in proportion, sintering, grinding, and sintering again to obtain a thulium-doped bismuth germanium silicate polycrystal material; putting a seed crystal into a seed trap part of the crucible and fixing the seed crystal, filling the thulium-doped bismuth germanate polycrystal material into the crucible and sealing the crucible, and moving the crucible into a down-leading pipe; placing the lead-down pipe in a crystal furnace, and after the polycrystal material in the crucible is completely melted, keeping the temperature for 2-4 hours; and descending the leading-down pipe at the speed of 0.2-0.5 mm/h, and carrying out crystal growth. The thulium-doped bismuth silicon germanate laser crystal prepared by the invention has high-intensity broadband luminescence in a range of 1.5-2.0 microns, can realize high-power laser output, and has a wide application prospect in the directions of laser ranging radars and space communication.

The invention discloses a seeding temperature capturing method for crystal growth adopting a czochralski method. The method comprises the steps that a crucible for containing a crystal material in a crystal oven is heated at a constant speed with a certain heating rate to the target temperature, and the target temperature is higher than that of a melting point of the crystal material; a curve formed by crucible temperature changing along with time in the temperature rising process is obtained, and the temperature corresponding to a point with the maximum slope in the curve is selected as seeding temperature. According to the seeding temperature capturing method for crystal growth adopting the czochralski method, only by means of simple heating operation, the seeding temperature of a crystal can be selected by utilizing the curve of the temperature changing along with the time in the temperature rising process. The invention further provides automatic capturing equipment for the seeding temperature, a seeding temperature obtaining unit is used for obtaining the curve of the temperature changing along with the time in the temperature rising process, so that the seeding temperature of the crystal is selected and obtained, the influence on seeding operation from labor experience is excluded, and the seeding temperature of the novel crystal can be judged accurately.

The invention discloses a heat preservation crystal oven longitudinal height adjusting device. The adjusting device comprises a heat preservation crystal oven, and further comprises a support, a lifting device, a fixing piece and a connecting piece, wherein the support supports the heat preservation crystal oven, the heat preservation crystal oven is connected with the lifting device through the connecting piece, the heat preservation crystal oven moves up and down through the lifting device, and the heat preservation crystal oven is positioned and fixed through the fixing piece. According tothe adjusting device, the positions of a traction conveying roller and an auxiliary supporting roller on a production line are kept fixed and unchanged, the longitudinal height of the heat preservation crystal oven is only adjusted, existing several adjusting points are changed into one adjusting point, so that the adjusting process is simplified, because of single-point adjustment, the levelnessof the production line is effectively guaranteed, an adjusting method is simple and working hours are saved.

The invention relates to the field of metal smelting equipment, in particular to a double-smelting-position alternate vacuum self-consuming furnace. The double-smelting-position alternate vacuum self-consuming furnace is provided with a lifting guide frame and a crystal oven. The lifting guide frame is provided with an electrode clamping device. A fake electrode is connected to the electrode clamping device in a clamping manner, and a self-consuming electrode is welded to the bottom of the fake electrode. A sealing cover is arranged between the crystal oven and the fake electrode. A transposition base capable of rotating in a reciprocating manner between two smelting positions is installed at the bottom of the lifting guide frame. A fixing frame is installed at the position, correspondingto the two smelting positions, below the electrode clamping device. The crystal oven is of a double-layer wall structure, and a water cooling device is arranged in the double-layer wall structure. Anelectroslag feeding port and an inert gas inflation opening stretching into the crystal oven are further formed in the oven wall of the crystal oven correspondingly. By means of the double-smelting-position alternate vacuum self-consuming furnace, the double-smelting-position alternate manner is adopted, uninterrupted continuous smelting with zero waiting time is achieved, and the smelting efficiency is greatly improved; and meanwhile a vacuum airtight crystallizer is adopted, the desulfurization effect in the smelting process is greatly improved, and the smelting quality is improved.

The invention discloses a device and a method for growing a high-temperature oxide crystal by an improved heat exchange method with a seed crystal arranged on the top, which are characterized in that a kyropoulos method, a Czochralski method (CZ), a heat exchange method (HEM), a temperature gradient method (TGT), a Bridgman-Stockbarger method and a kyropoulos method (KY method) are combined together; according to the special high-temperature vacuum crystal furnace, gas flows in from the center of the top of a hearth from top to bottom, absolute uniform and symmetrical flow out from the center of the bottom is ensured through flow planning, and gradients of all parts in different growth stages are achieved by adjusting the gas flow in different stages and the pumping speed of a vacuum pump. The method comprises the following steps: charging a furnace, vacuumizing, introducing flowing protective gas, heating and melting materials, washing seed crystals, changing the gas inlet and outlet proportion, carrying out real-time gradient adjustment, seeding by a pulling method, carrying out a hole shrinkage process, increasing the shouldering process of a heat exchange method for increasing the gas flow, controlling a crystal growth interface (adjusting a convex interface to be slightly convex or close to a flat interface), and carrying out equal-diameter growth by combining HEM heat exchange with a KY technology (namely carrying out equal-diameter growth by combining HEM heat exchange with a KY technology). A weighing diameter control technology is optimized; amp is ended through a KY method; and removing the crucible, and performing in-situ annealing by gradually increasing the pressure of the protective gas. According to the invention, the existing method is combined to produce the large-size high-temperature oxide crystal.

The invention provides a Bridgman-Stockbarger crystal growth device. The Bridgman-Stockbarger crystal growth device comprises a furnace body, a crucible, a lifting unit, a heating unit, a temperature measurement unit, a temperature acquisition unit and a control unit, the lifting unit controls the crucible to lift in the furnace body; the furnace body can be oppositely opened, so that the crystal growth process can be conveniently observed at any time; the heating device is arranged in the heating furnace; the furnace body comprises a high-temperature area, a gradient area and a low-temperature area; the high-temperature area and the low-temperature area are independently controlled in temperature; the temperature measuring device detects the temperature of the crucible; the temperature acquisition unit acquires the temperature detected by the temperature measuring device; the control unit controls lifting of the lifting unit and heating of the heating unit. According to the invention, the defects of high height, heavy weight, difficult observation, difficult maintenance, difficult data acquisition and the like of the crystal furnace are overcome, the small-sized furnace body is utilized to facilitate preliminary understanding of the crystal growth condition, and the small-sized furnace body can also be used for a display experiment and occupies a small space. The experimental period is short, and data can be quickly accumulated. And small-size crystal growth can be carried out, and reference is provided for large-size crystal growth.

The invention discloses an induction heating power supply for a multi-temperature-zone crystal furnace. The induction heating power supply comprises N induction heating power supplies and N-1 coupling transformers TM, wherein N is greater than 2, and a coupling transformer TM is arranged between every two induction heating power supplies; each induction heating power supply internally comprises an inverter and a resonant tank circuit, the resonant tank circuit comprises a matching transformer T, a resonant capacitor C and an induction coil L, a primary coil of the matching transformer T is connected with the inverter, and two ends of a secondary coil of the matching transformer T are respectively connected with the resonant capacitor C and the induction coil L; and a primary coil and a secondary coil of a coupling transformer TM are respectively connected between the secondary coils and the induction coils L of the two adjacent matching transformers T, so that the electromotive force directions of the two adjacent resonance tank circuits are consistent, and the current directions of the dotted terminals of the coupling transformer TM are opposite. According to the invention, independent power adjustment of a plurality of induction heating power supplies can be realized, and the problem of mutual inductance interference of two adjacent inductors in multi-temperature-zone induction heating application in the prior art is solved.