83kg-grade sapphire crystal furnace crystal-growing structure and crystal-growing method

Abstract

The invention discloses an 83KG-grade sapphire crystal furnace crystal-growing method which comprises the following steps: S1, equipment checking and loading; S2, finding crystal pattern melting critical power; S3, performing amethyst preheating under the condition of the stable power of 80-84kW, controlling the furnace temperature at the stabilization stage to reach the seeding temperature, descending the seed rod to a safe position at a constant speed, and getting ready to enter into the crystal cleaning and trial temperature stage; S4, cleaning the crystal and seeding; S5, shouldering; S6, growing crystals; S7, annealing; and S8, cooling and taking out. The melting power, stabilizing power and seeding power are controlled by virtue of the crystal growing power, and the thermal insulation effect, the crystal quality and crystal yield are improved. The crystal pattern melting critical power is found, crystal growing is performed in a narrow range in the critical power range, the cost of the enterprise is saved, the production efficiency is improved, the product quality is improved, the design of the crystal growing structure is reasonable, the production method is optimized, the production efficiency is high, and the method is suitable for mass production.

Description

technical field [0001] The invention relates to the technical field of sapphire production equipment, in particular to a crystal growth furnace structure and method for growing sapphire crystals. Background technique [0002] With the advancement of technology, there are more and more methods for artificially producing sapphire crystals, but no matter which method is good, sapphire crystals can grow only when they reach the crystal growth temperature of sapphire crystals. If there is no insulation layer, the high temperature of more than 2050 degrees in the furnace It is difficult to guarantee that in order to reach the growth temperature of sapphire crystals, heating has to be continued, which consumes a lot of electricity and wastes energy. More importantly, it seriously affects the quality of the grown sapphire crystals. On the other hand, for the modified How to find a crystal growth method suitable for the 83kg sapphire crystal furnace is also very important. Domestic c...

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Problems solved by technology

[0002] With the advancement of technology, there are more and more methods for artificially producing sapphire crystals, but no matter which method is good, sapphire crystals can grow only when they reach the crystal growth temperature of sapphire crystals. If there is no insulation layer, the high temperature of more than 2050 degrees in the furnace It is difficult to guarantee that in order to reach the growth temperature of sapphire crystals, heating has to be continued, which consumes a lot of electricity and wastes energy. More importantly, it seriously affects the quality of the grown sapphire crystals. On the other hand, for the modified How to find a crystal growth method suitable for the 83kg sapphire crystal furnace is also very important. Domestic crystal growth methods are being explored. The grown crystals have lattice defects, and the value is greater than 1000 dislocation density / pits.cm -2. There are many crystal grain boundaries and bubbles, which will seriously affect the internal structure and quality of sapphire substrates and windows, the leading products of sapphire. The yield is extremely low, the waste is huge, the cost is high, the efficiency is low, and it is difficult to produce on a large scale

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