Thulium-doped BGSO human eye safety laser crystal and preparation method thereof

A laser crystal, eye-safe technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., to achieve the effects of inhibiting component segregation, improving growth efficiency and application, and simple process equipment

Inactive Publication Date: 2021-11-26
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

T m 3+ There is no report on the research of doped bismuth silicon germanate crystals. By doping the corresponding rare earth ions, it can

Method used

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  • Thulium-doped BGSO human eye safety laser crystal and preparation method thereof
  • Thulium-doped BGSO human eye safety laser crystal and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: (Tm 0.005 Bi 0.995 ) 4 (Ge 0.1 Si 0.9 ) 3 o 12

[0025] Tm with a purity of not less than 99.99% 2 o 3 , Bi 2 o 3 , GeO 2 and SiO 2 The powder was dried in a drying oven at 120°C for 3 hours, and then according to the chemical formula (Tm 0.005 Bi 0.995 ) 4 (Ge 0.1 Si 0.9 ) 3 o 12 Carefully calculate the mass required for each raw material and weigh it accurately; grind the weighed raw material for 60 minutes to mix the raw materials evenly, then sinter at 700°C for 3 hours to obtain the pre-calcined material, and then grind the pre-calcined material for 60 minutes again, After uniformity, it was sintered again at 800°C for 6 hours to obtain polycrystalline thulium-doped bismuth silicon germanate.

[0026] The BSO single crystal processed into a cylindrical shape, the crystal orientation is , and the size is Ф10×50mm is used as the seed crystal, and the thulium-doped bismuth silicon germanate polycrystalline material and the seed crystal...

Embodiment 2

[0027] Embodiment 2: (Tm 0.02 Bi 0.98 ) 4 (Ge 0.5 Si 0.5 ) 3 o 12

[0028] Tm with a purity of not less than 99.99% 2 o 3 , Bi 2 o 3 , GeO 2 and SiO 2 The powder was dried in a drying oven at 120°C for 4 hours, and then according to the chemical formula (Tm 0.02 Bi 0.98 ) 4 (Ge 0.5 Si 0.5 ) 3 o 12Carefully calculate the mass required for each raw material and weigh it accurately; grind the weighed raw materials for 60 minutes to mix the raw materials evenly, then sinter at 750°C for 2 hours to obtain pre-fired materials, and then grind the pre-fired materials for 60 minutes again, After uniformity, it was sintered again at 900°C for 4 hours to obtain a polycrystalline material of bismuth silicon germanate doped with thulium. The unprocessed crystal sample is as follows: figure 1 shown.

[0029] The BSO single crystal processed into a cylindrical shape, the crystal orientation is , and the size is Ф10×50mm is used as the seed crystal, and the thulium-doped b...

Embodiment 3

[0030] Embodiment 3: (Tm 0.1 Bi 0.9 ) 4 (Ge 0.9 Si 0.1 ) 3 o 12

[0031] Tm with a purity of not less than 99.99% 2 o 3 , Bi 2 o 3 , GeO 2 and SiO 2 The powder was dried in a drying oven at 120°C for 3 hours, and then according to the chemical formula (Tm 0.1 Bi 0.9 ) 4 (Ge 0.9 Si 0.1 ) 3 o 12 Carefully calculate the mass required for each raw material and weigh it accurately; grind the weighed raw material for 60 minutes to mix the raw materials evenly, then sinter at 700°C for 4 hours to obtain the pre-calcined material, and then grind the pre-calcined material for 60 minutes again, After uniformity, it was sintered again at 850°C for 4 hours to obtain thulium-doped bismuth silicon germanate polycrystalline material, and the emission spectrum was as follows: figure 2 shown.

[0032] The BGO single crystal processed into a cylindrical shape with a crystal orientation of and a size of Ф10×50mm is used as a seed crystal, and the thulium-doped bismuth silic...

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Abstract

The invention discloses a thulium-doped bismuth silicon germanate laser crystal and a preparation method thereof. The molecular formula of the material is (TmxBi1-x)4(GeySi1-y)3O12, the value range of x is 0.005-0.15, and the value range of y is 0.1-0.9. The method comprises the following steps: mixing the raw material powder in proportion, sintering, grinding, and sintering again to obtain a thulium-doped bismuth germanium silicate polycrystal material; putting a seed crystal into a seed trap part of the crucible and fixing the seed crystal, filling the thulium-doped bismuth germanate polycrystal material into the crucible and sealing the crucible, and moving the crucible into a down-leading pipe; placing the lead-down pipe in a crystal furnace, and after the polycrystal material in the crucible is completely melted, keeping the temperature for 2-4 hours; and descending the leading-down pipe at the speed of 0.2-0.5 mm/h, and carrying out crystal growth. The thulium-doped bismuth silicon germanate laser crystal prepared by the invention has high-intensity broadband luminescence in a range of 1.5-2.0 microns, can realize high-power laser output, and has a wide application prospect in the directions of laser ranging radars and space communication.

Description

technical field [0001] The invention relates to an eye-safe laser crystal doped with thulium bismuth silicon germanate and a preparation method thereof, belonging to the technical field of laser crystal materials. Background technique [0002] 1.5-2.0μm near-mid-infrared light is located within the atmospheric window and is in the "eye-safe" band, so it has strong penetrating power to the atmosphere, and water molecules also have a strong absorption of this band. These characteristics make it widely used in ranging, coherent lidar, atmospheric sensing, and medical surgery. At the same time, high-power 2μm lasers are also good pump sources for mid-infrared 3-5μm optical parametric oscillators. Therefore, a high-quality 2μm laser source, especially a high-power 2μm ultrafast laser, has become a current research hotspot. [0003] Tm ion is a common laser gain ion, Tm 3+ Ionic 3 h 4 → 3 f 4 , 3 h 6 → 3 f 4 The transition covers the 1.5-2.0μm band, and can achieve 1.5-2...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/22H01S3/16
CPCC30B11/00C30B29/22H01S3/1675H01S3/1698
Inventor 徐家跃马振振陈媛芝邵跃钦
Owner SHANGHAI INST OF TECH
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