Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lining for polysilicon crystal oven wall protection and manufacturing method thereof

A manufacturing method and technology of polysilicon, which are applied in the growth of polycrystalline materials, chemical instruments and methods, furnaces, etc., can solve problems such as threats to the life safety of operators, economic losses, and influences, and achieve damage avoidance, excellent thermal shock resistance, and thermal shock resistance. Significant economic and social effects

Active Publication Date: 2012-05-30
常熟华融太阳能新型材料有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has brought serious economic losses to the enterprise, directly affecting the life safety of operators

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lining for polysilicon crystal oven wall protection and manufacturing method thereof
  • Lining for polysilicon crystal oven wall protection and manufacturing method thereof
  • Lining for polysilicon crystal oven wall protection and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] First, 45 parts of massive high-purity quartz and 55 parts of powdered high-purity quartz are put into granulation equipment for wet granulation, and after adding water and grinding, the particle size is controlled at 85 μm to 95 μm; after the slurry is taken out, it is fully stirred, and placed After 48 hours, the physical and chemical indicators will be tested, and the next process can be carried out after passing the test; the slurry is poured into the pressure device, and the slurry is injected into the plaster mold with 2 bar pressure. The distribution is uniform, the vibration frequency is 30-40 times / min, and the amplitude is 2-3 mm; put it in the mold for 5 hours, make it fully dehydrated, and then demould, the demoulding must be very careful; put it in the dryer after demoulding Drying in the furnace, the drying temperature is 180°C, and it has a certain strength after drying; put the dried body into the kiln for sintering, and use a reducing atmosphere to prote...

Embodiment 2

[0036] First, put 48 parts of massive high-purity quartz and 52 parts of powdered high-purity quartz into the granulation equipment for wet granulation. The geometric size of the block material is less than 50 mm, and the particle diameter of the powder material is less than 5 mm. Add water After grinding, the particle size is controlled at 80 μm to 120 μm; the slurry is taken out and fully stirred, and the physical and chemical indicators are tested after being placed for 30 hours. Inject the slurry into the gypsum mold with a pressure of 2.5bar. The grouting in the early stage is supplemented by slight vibration to make the material evenly distributed. The vibration frequency is 30-35 times / min, and the amplitude is 1-3mm; After it is fully dehydrated, it will be demoulded, and the demoulding must be very careful; after demoulding, put it in a dryer for drying, the drying temperature is 210 ° C, and it has a certain strength after drying; put the dried embryo body into the ki...

Embodiment 3

[0039] First, put 50 parts of massive high-purity quartz and 50 parts of powdered high-purity quartz into the granulation equipment for wet granulation. The geometric size of the block material is less than 50 mm, and the particle diameter of the powder material is less than 5 mm. Add water After grinding, the particle size should be controlled at 90 μm to 110 μm; after taking out the slurry, fully stir it, place it for 36 hours, pour it into the pressure device, and inject the slurry into the plaster mold with a pressure of 3 bar. The frequency is 35-40 times per minute, and the amplitude is 1-3mm; put it in the mold for 8 hours, make it fully dehydrated, and then demould; after demoulding, put it in a dryer for drying, and the drying temperature is 185°C; Put the dried body into a kiln for sintering. During the sintering process, a reducing atmosphere is used for protection. The sintering temperature is 950°C to 1450°C, and the sintering time is 50 hours to obtain an opaque q...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a lining for polysilicon crystal oven wall protection and a manufacturing method thereof; the shape of the lining is in a regular hemispherical opaque three-dimensional structure, and the upper part thereof is open; the mass ratio of the components is as follows: silicon dioxide is more than 99.6 weight percent, alumina is less than 800ppm, and ferric oxide is less than 40ppm. The process comprises the following steps: raw material high-purity quartz is put into granulating equipment for wet granulation, grout is then taken out and fully stirred, placed and poured into a pressure device, and injected into a plaster mold; in pre-grouting, the plaster mold is slightly vibrated, and the grout is put into the mold and stays still so that the grout is fully dehydrated, and demolded; after demolding, the grout is dried in a dryer, an embryo prepared is put into a kiln to be sintered, and the opaque quartz lining is prepared after sintering; and finally a layer of silicon nitride is sprayed on the inner wall of the opaque quartz lining. The invention produces the matched oven wall protection quartz lining according to the technical requirements of a multicrystalfurnace, effectively prevents the harm of silicon leakage in the crystallization process of the crystal oven to the multicrystal furnace, and is simple and practical.

Description

technical field [0001] The invention relates to a quartz lining used for protecting the furnace wall of a polysilicon crystallization furnace and a manufacturing method thereof. Background technique [0002] In today's world, the power supply is getting tense, and thermal power consumes too much energy. In order to reduce energy consumption and develop alternative green energy, the photovoltaic industry was born and has developed rapidly in the past two years. [0003] Due to the relatively short development time of the photovoltaic industry in China, various technologies have not been able to keep pace with it. For example, there are still many immature aspects in the polycrystalline furnace, which often leads to silicon leakage during the crystallization of silicon ingots in the polycrystalline furnace. . Once the silicon liquid leaks out, it will cause damage to the polycrystalline furnace. Because the 1450° of silicon flows into the bottom of the polycrystalline furnace...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B28/06C30B35/00F27D1/04C04B35/14C04B35/622
Inventor 杨艳红张伏严
Owner 常熟华融太阳能新型材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com