Device for automatically detecting two-dimensional shape of wafer substrate

Abstract

The invention discloses a device for automatically detecting the two-dimensional shape of a wafer substrate and belongs to the semiconductor material nondestructive detection technical field. In the device, a plurality of paths of emergent light of N laser beams are emitted by one laser and pass through a beam splitting prism including a plurality of beam splitting surfaces; the light intensities of the plurality of paths of emergent light emitted out from the beam splitting prism can be identical through endowing different reflectivity and transmissivity for the plurality of beam splitting surfaces, namely, the plurality of paths of emergent light with the same light intensity are not emitted by a plurality of lasers, but are obtained through reflecting and refracting the light emitted by one laser by means of the beam splitting prism, and therefore, in a limited arrangement space, a large-sized laser can be selected; when the size of the laser is increased, the inner heat dissipation performance of the laser can be improved; a feedback circuit is additionally arranged in the laser, the internal parameters of the laser can be changed according to needs; and thus, the output power and wavelength stability of the laser can be enhanced.

Description

technical field [0001] The invention relates to the technical field of non-destructive testing of semiconductor materials, in particular to a device for automatically detecting the two-dimensional shape of a wafer substrate. Background technique [0002] The invention patent application with the application number 201410188236.2 relates to a device for automatically detecting the two-dimensional shape of the wafer substrate, including N PSDs, N beams of laser light and a first beam splitting element, the N beams of laser light are arranged along a straight line, wherein the N is a natural number greater than 3, and the N PSDs correspond to N beams of laser light one by one. The N beams of laser light first shoot to the first light splitting element, and form incident light after passing through the first light splitting element. The incident light The light is incident on the wafer substrate, and N incident points are formed in the radial direction on the wafer substrate, an...

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Problems solved by technology

For example, when N is 5, the specifications of the required laser are 4mm in diameter and 10mm in length, and the output power and wavelength of such a laser are unstable

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