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Magnetic random access memory memory-unit and read-write method and anti-interference method therefor

A random access memory, memory cell technology, applied in the fields of magnetic field-controlled resistors, electrical components, electrical solid devices, etc., can solve problems such as high switching current or recording voltage, high MTJ resistivity instability, etc.

Active Publication Date: 2016-06-01
SHANGHAI CIYU INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the patterning of small-scale MTJ elements leads to high instability in MTJ resistivity and requires relatively high switching currents or recording voltages.

Method used

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  • Magnetic random access memory memory-unit and read-write method and anti-interference method therefor
  • Magnetic random access memory memory-unit and read-write method and anti-interference method therefor
  • Magnetic random access memory memory-unit and read-write method and anti-interference method therefor

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Embodiment 1

[0086] figure 1A schematic cross-sectional structure diagram of a vertical spin-transfer torque magnetic random access memory unit of the present invention is shown, which includes a top electrode 11, a magnetic tunnel junction 12, an intermediate layer 13, a spin valve layer 14, and a bottom electrode 15. The magnetoresistive unit 1, and the spin valve control layer 2 arranged on the side of the spin valve layer 14 and separated by the dielectric layer 3.

[0087] The magnetic tunnel junction 12 is composed of a magnetic reference layer 121, a tunnel barrier layer 122 and a magnetic memory layer 123 stacked in sequence, and the magnetic reference layer 121 is adjacent to the top electrode 11, and the magnetic memory layer 123 is adjacent to the intermediate layer 13, as figure 2 shown. The magnetization direction of the magnetic reference layer 121 is constant and the magnetic anisotropy is perpendicular to the layer surface; the magnetization direction of the magnetic memo...

Embodiment 2

[0103] Figure 12 It shows a schematic cross-sectional structure diagram of another MRAM memory unit of the present invention, which includes a magnetoresistance unit composed of a top electrode 11, a magnetic tunnel junction 12, an intermediate layer 13, a spin valve layer 14, and a bottom electrode 15 1, and the word line 20 arranged on the side of the spin valve layer 14 and separated by the dielectric layer 3 , the word line 20 is at a position substantially equal to the spin valve layer 14 .

[0104] Figure 12 It also shows the bit line 4 connected to the top electrode 11, and the MOS transistor connected to the magnetoresistive unit 1, including the drain 51, the gate 52 and the source 53, and the corresponding drain lead 54, gate The lead 55 and the source lead 56 are connected, the drain lead 54 is connected to the bottom electrode 15 , and the gate lead 55 is connected to the word line 20 .

[0105] The difference between this embodiment and the first embodiment is...

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Abstract

The invention provides a magnetic random access memory memory-unit. The memory unit comprises a stacked structure and a spin valve control layer, wherein the stacked structure comprises a magnetic reference layer, a magnetic memory layer, a tunnel barrier layer, an intermediate layer and a spin valve layer, wherein the magnetization direction of the magnetic reference layer is unchanged, and the magnetic anisotropy is perpendicular to the surface layer; the magnetization directions of the magnetic memory layer and the spin valve layer are variable, and magnetic anisotropy is perpendicular to the corresponding surface layer; the tunnel barrier layer is positioned between the magnetic reference layer and the magnetic memory layer, and adjacent to the magnetic reference layer and the magnetic memory layer separately; the intermediate layer is adjacent to the magnetic memory layer; the magnetic anisotropy of the spin valve layer is less than that of the magnetic memory layer; the spin valve layer is adjacent to the intermediate layer; and the spin valve control layer is a conductive layer spaced from the stacked structure. The invention also provides a read-write method and an anti-interference method for the magnetic random access memory memory-unit, and another memory unit and a read-write method and an anti-interference method therefor based on the above design concepts.

Description

technical field [0001] The invention relates to the field of storage devices, in particular to a vertical spin transfer torque magnetic random access memory unit and its reading, writing and anti-interference methods. Background technique [0002] In recent years, people make use of the characteristics of Magnetic Tunnel Junction (MTJ, Magnetic Tunnel Junction) to make Magnetic Random Access Memory, which is MRAM (Magnetic Random Access Memory). MRAM is a new type of solid-state non-volatile memory, which has the characteristics of high-speed reading and writing. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization is constant. When the direction of the magnetization vector between the magnetic memory la...

Claims

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Application Information

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IPC IPC(8): H01L27/22H01L43/08
Inventor 郭一民陈峻肖荣福夏文斌戴瑾
Owner SHANGHAI CIYU INFORMATION TECH
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