Light emitting diode epitaxial wafer with novel quantum barrier and preparation method for light emitting diode epitaxial wafer

Abstract

The invention discloses a light emitting diode epitaxial wafer with novel quantum barrier and a preparation method for the light emitting diode epitaxial wafer, and belongs to the field of the light emitting diode. The light emitting diode epitaxial wafer comprises a substrate, and a u type GaN layer, an N type GaN layer, a multi-quantum-well active layer and a P type GaN carrier layer coating the substrate in sequence, wherein the multi-quantum-well active layer comprises M+N quantum well layers and M+N quantum barrier layers that are growing alternatively; the quantum well layers adopt InGaN well layers; the light emitting diode epitaxial wafer is characterized in that the M quantum barrier layers, close to the N type GaN layer, in the M+N quantum barrier layers adopt Alx1Ga1-x1N / GaN structures; the N quantum barrier layers, close to the P type GaN carrier layer, in the M+N quantum barrier layers adopt Alx2Ga1-x2N / GaN structures; M and N are both integers greater than 1, and the difference value between M and N is 0 or 1, wherein x1 is greater than 0 and less than 1; x2 s greater than 0 and less than; and x1 is greater than x2.

Description

technical field [0001] The invention relates to the field of light emitting diodes (English Light Emitting Diode, referred to as LED), in particular to a light emitting diode epitaxial wafer with a novel quantum barrier and a preparation method thereof. Background technique [0002] LED is known as the most promising green lighting source in the 21st century because of its advantages such as high brightness, low heat, long life, non-toxicity, and recyclability. As the most important category of LEDs, GaN-based LEDs are widely used in many fields. The existing GaN-based LED epitaxial wafer mainly includes a substrate, a buffer layer, an N-type GaN layer, a multi-quantum well active layer, and a P-type GaN carrier layer. [0003] During the working process of GaN-based LEDs, the electrons generated in the N-type GaN layer and the holes generated in the P-type GaN carrier layer migrate to the multi-quantum well active layer under the action of an electric field, and are formed...

AI Technical Summary

Problems solved by technology

[0005] As the working current of GaN-based LEDs increases, the current density increases accordingly. In this high current density scenario, the electrons injected into the MQW active layer also increase, resulting in the failure of some electrons to interact with the holes. The multi-quantum well active layer recombines and migrates to the P-type GaN carrier layer, resulting in an increase in the degree of electron leakage, which makes the luminous efficiency of the LED chip decrease under the condition of high current density.

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