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Co2VAL semimetal surface preparation technology

A preparation process and semi-metal technology, applied in the field of Co2VAl semi-metal surface preparation process, can solve problems such as backward methods

Inactive Publication Date: 2016-06-08
XUCHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the existing process method is backward and needs to be improved

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  • Co2VAL semimetal surface preparation technology
  • Co2VAL semimetal surface preparation technology
  • Co2VAL semimetal surface preparation technology

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Embodiment Construction

[0023] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are given in the description and drawings, but the present invention can be implemented in many different forms and is not limited to the embodiments described in the description. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0024] It should be noted that when a certain element is fixed to another element, it includes directly fixing the element to the other element, or fixing the element to the other element through at least one other element in the middle. When an element is connected to another element, it includes directly connecting the element to the other element, or connecting the element to the other element throu...

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Abstract

The invention provides a Co2VAL semimetal surface preparation technology. The technology comprises the following steps of: firstly, constructing a bulk structure, and verifying that the ground state of Co2VAL is a ferromagnet with a semimetal characteristic; secondly, constructing surface structures, respectively taking 25, 25, 23 and 23 atomic layers with the thickness of 12 angstroms, and adding the atomic layers to two ends of films in a vacuum and symmetric manner so as to avoid interaction of adjacent film layers; thirdly, carrying out structure optimization of the above four surfaces, and in order to approach reality as far as possible, allowing position relaxation of atoms on the first five layers at the outer side, and fixing the positions of other atoms; fourthly, calculating physical quantities of the surface structures after the optimization, such as a state density and magnetic moment; fifthly, analyzing the state density, magnetic moment, spin polarization and stability of the surface structures; and sixthly, by means of figure and table analysis and comparison, obtaining a semimetal surface film which has 100% spin polarization and is stable in structure.

Description

technical field [0001] The present invention relates to a Co 2 VAl semi-metal surface preparation process. Background technique [0002] Many Heusler alloys have been found to have semi-metallic properties, ie one spin channel is metallic and the other is semiconducting or insulating, thus exhibiting 100% spin polarization. This unique characteristic makes this kind of Heusler alloy material the best spin-polarized electron injection source for semiconductors. Therefore, in recent years, the study of the electronic structure and properties of heterojunctions composed of Heusler alloys and semiconductors has aroused great interest of many researchers. In addition, the lattice structures and lattice constants of many Heusler alloys and common semiconductors are easily matched, so these Heusler alloys are experimentally easy to grow on common semiconductors. However, it must be mentioned that although these Heusler-type half-metallic ferromagnets have good lattice matching w...

Claims

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Application Information

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IPC IPC(8): H01L43/12
CPCH10N50/01
Inventor 张元敏韩红培王红玲
Owner XUCHANG UNIV