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Method of forming mems devices

A device and device layer technology, applied in the field of MEMS device formation, can solve the problems of low sensing sensitivity and easy failure of movable parts, and achieve the effect of improving sensitivity

Active Publication Date: 2017-08-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

MEMS devices, such as humidity sensors, have movable parts suspended in the cavity. During the actual production process, it was found that the above-mentioned movable parts have some defects, such as the movable parts are prone to failure, or the sensing sensitivity is low.

Method used

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  • Method of forming mems devices

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Embodiment Construction

[0031] As mentioned in the background art, the movable parts of existing MEMS devices have low sensitivity. In view of the above problems, the inventors have analyzed and found that the cause is: when forming a cavity in the silicon substrate to release the movable parts, if isotropic etching is used, the side of the cavity formed by isotropic etching will The shape of the wall is arc-shaped, which will cause silicon residues under the movable parts; if anisotropic etching is performed, for example, when using TMAH aqueous solution, the corrosion is faster in the crystal direction, and the corrosion is faster in the crystal direction. Slow, the crystal direction is the downward direction, and the crystal direction is the direction of the side wall of the cavity. When the predetermined cavity depth has been reached, the amount of removal of the side wall of the cavity is small, resulting in a gap under the movable part. Silicon residues; the above residues will affect the s...

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Abstract

A forming method of an MEMS device comprises the steps: firstly, ion implantation is performed on a partial region of a surface layer of a silicon substrate to form a modified region, then a device layer is formed on the silicon substrate having the modified region, and grooves for exposing the modified region are formed in the device layer; the modified region and a part of the silicon substrate are removed by means of wet-process corrosion through the grooves to form a cavity; the nature of the modified region is different from that of the silicon substrate, so when the silicon substrate is corroded to form the cavity through selecting a corrosion liquid, the material of the modified region below the device layer suspending at the upper part of the cavity can be completely removed; due to complete removal of the modified region, no silicon material remains below a suspending movable member, and thus the sensitivity of the movable member is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a MEMS device. Background technique [0002] In the prior art, in order to improve device integration, reduce device volume, and reduce device cost, MEMS devices have gradually become the mainstream of semiconductor devices. MEMS devices, such as humidity sensors, have movable parts suspended in the cavity. During the actual manufacturing process, it is found that the above-mentioned movable parts have some defects, such as the movable parts are prone to failure, or the sensing sensitivity is low. [0003] In view of the above problems, the present invention provides a new method for forming MEMS devices to improve the yield and sensitivity of movable parts. Contents of the invention [0004] The problem solved by the invention is how to improve the yield and sensitivity of the movable parts in the MEMS device. [0005] In order to solve the above ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 张先明丁敬秀
Owner SEMICON MFG INT (SHANGHAI) CORP