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PECVD gas shower head, film forming chamber and working method

A gas shower head and film-forming cavity technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of reduced dissociation efficiency, slow cleaning speed, etc. Improved uniformity, high commercial value

Active Publication Date: 2016-06-22
IDEAL ENERGY SHANGHAI SUNFLOWER THIN FILM EQUIP
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  • Abstract
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Problems solved by technology

However, the complex transport path from the RPS source to the deposition chamber leads to recombination of fluorine-containing reactive groups and reduces the dissociation efficiency, resulting in too slow cleaning speed

Method used

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  • PECVD gas shower head, film forming chamber and working method
  • PECVD gas shower head, film forming chamber and working method
  • PECVD gas shower head, film forming chamber and working method

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Embodiment Construction

[0031] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings.

[0032] figure 1 Shown is a schematic structural view of a PECVD film-forming chamber in an embodiment of the present invention. The PECVD film-forming chamber includes an upper electrode 10 , a lower electrode 20 , and a cavity 30 . The upper electrode 10 is connected to a radio frequency power supply, and a plasma discharge region 40 is formed between the lower electrode 20, which is the film forming region of the PECVD film forming chamber, and the upper surface 11 of the upper electrode is in contact with the cavity top wall The distance range of the inner surface 31 is less than or equal to 3 mm, so as to prevent generation of parasitic plasma.

[0033] The upper electrode 10 is also connected to a gas source, and the gas source includes process gas or cleaning gas to provide the required gas to the plasma discharge area, so the upp...

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Abstract

The present invention provides a PECVD gas shower head, the PECVD gas shower head comprises a top part, a bottom part, and a side wall located between the top part and the bottom part, a gas uniform distribution chamber is formed between the top part and the bottom part, the top part comprises a top wall and a process gas uniform distribution layer, the center of the top wall is provided with a process gas channel, a radio-frequency power supply signal channel and a RPS plasma channel, and the process gas uniform distribution layer is arranged below the top wall, the process gas channel and the process gas uniform distribution layer are connected, then first gas homogenization is performed in the process gas uniform distribution layer, then second gas homogenization is performed in the gas uniform distribution chamber, a radio-frequency power supply signal is fed directly to the top wall, and the RPS plasma channel is directly connected with the gas uniform distribution chamber. The PECVD gas shower head can improve the uniformity in film thickness of a large area substrate and can increase production capacity.

Description

technical field [0001] The invention relates to new flat panel displays, crystalline silicon solar cells and semiconductor related fields, in particular to a PECVD gas shower head, a film forming chamber and a working method in the field. Background technique [0002] PECVD technology (Plasma Enhanced Chemical Vapor Deposition) is to use microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form plasma locally, which is filled with a large number of dissociated chemically active active groups , is easily adsorbed on the surface of the substrate to deposit the desired film. Now, PECVD technology is widely used in the fields of semiconductor manufacturing, flat panel manufacturing and solar cell manufacturing. It is mainly used to deposit various insulating films and semiconductor films, including: SiNx, SiOx, SiNxOx and aSi films. With the continuous development of technology, the area of ​​various coated substrates is increasing day ...

Claims

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Application Information

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IPC IPC(8): C23C16/511C23C16/513C23C16/517
Inventor 马哲国陈金元王慧慧杨飞云谭晓华
Owner IDEAL ENERGY SHANGHAI SUNFLOWER THIN FILM EQUIP
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