Nondestructive positioning method for GOI failure point and GOI failure analysis method

Abstract

The invention relates to a nondestructive positioning method for a GOI failure point and a GOI failure analysis method. The nondestructive positioning method comprises the following steps: 1, removing a metal interconnection layer of a sample to be analyzed to obtain a pretreatment sample to be analyzed with an exposed salicide layer; 2, based on a PVC method, irradiating the salicide layer of the pretreatment sample to be analyzed with electronic beams, observing whether the salicide layer is lit, if the salicide layer is lit, determining that the sample to be analyzed has the GOI failure point, and executing the step 3, and otherwise, determining that the sample to be analyzed does not have the GOI failure point, and ending the operation; 3, cutting the salicide layer lit by the electronic beams into a plurality of relatively separated regions; 4, irradiating the regions with the electronic beams based on the PVC method once again, and finding out the lit salicide layer in the regions; and 5, cyclically executing the steps 3 and 4, and ending the operation until the salicide layer lit by the electronic beams cannot be cut any more. The nondestructive positioning method realizes high-precision positioning of the GOI failure point, and in the whole positioning process, further damage to the GOI failure point cannot be caused.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a non-destructive positioning method of a GOI failure point and a GOI failure analysis method. Background technique [0002] The GOI test is a voltage withstand test of the gate oxide layer in the MOS device. If the GOI test fails, a GOI failure analysis is required to find out the cause of the GOI test failure. The main process of traditional GOI failure analysis is: obtain the optical picture of the GOI failure point of the sample to be analyzed through hot spot analysis, compare the optical picture with the electron microscope picture of the sample to be analyzed, locate the GOI failure point, and then use FIB to prepare TEM Samples were subjected to TEM observation and elemental analysis to obtain the composition of abnormal substances at the failure point of the GOI. However, the location of GOI failure points based on hot spot analysis will lead to furt...

AI Technical Summary

Problems solved by technology

However, the location of GOI failure points based on hot spot analysis will lead to further destruction of GOI failure points, and the positioning accuracy can only reach 3-5um, which makes it time-consuming to prepare TEM samples with FIB in the later stage

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