Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crystal growing device

A technology of crystal growth and lifting device, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve crystal defects, reduce crystal crystallization temperature and other problems

Active Publication Date: 2016-06-29
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the crystal growth process, the presence of flux can reduce the crystallization temperature of the crystal, but it will also cause crystal defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystal growing device
  • Crystal growing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] 1) BaCO with a purity of 99.99% is used 3 with NH 4 h 2 PO 4 as raw material. Among them, BaCO 3 with NH 4 h 2 PO 4 The molar ratio is 5:6. BaCO 3 with NH 4 h 2 PO 4 Mix and place in a mortar and grind thoroughly for 30 minutes before tableting. The raw material blocks after tableting are placed in a corundum crucible and sintered at 750°C for 24 hours in an open environment to remove CO 2 , NH 3 with H 2 O, polycrystalline starting materials were synthesized.

[0056] 2) then the polycrystalline raw material obtained in step 1) and BaCl 2 , CsCl according to the stoichiometric ratio of 1:1:1 mixed uniformly, and ground to obtain a uniform mixture of raw materials.

[0057] 3) Put the homogeneous raw material mixture in figure 2 in a covered graphite crucible as shown in . Then sealed in a vacuum of 10 -4 in the quartz tube. Fix the sealed quartz tube on the crucible support rod, raise the crucible support rod to make the quartz tube fixed by the cr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a crystal growing device. The crystal growing device comprises a furnace body, a furnace body bracket used for supporting the furnace body and a furnace chamber located in the furnace body, wherein the furnace chamber comprises a high temperature zone located at the upper end and a low temperature zone located at the lower end; a lifting device is arranged on the furnace body bracket to control lifting of a crucible support rod in the furnace chamber and further control reciprocating motion of a to-be-heated raw material between the high temperature zone and the low temperature zone. The crystal growing device is novel and simple in structure, not only can adapt to growth of Ba3P3O10Cl single crystals, but also can adapt to crystal growth of a series of easily-oxidized and non-congruent melting compounds or compounds with the decomposition temperature lower than the melting point and has wide application value.

Description

technical field [0001] The invention relates to the technical field of single crystal growth, in particular to a crystal growth device. Background technique [0002] Nonlinear optics (NLO) crystals have extremely important applications in many fields. In recent years, many NLO compound powders with good properties and novel structures have been discovered at home and abroad, such as Ba 3 P 3 o 10 Cl et al., have not evaluated whether they have practical application value due to the absence of centimeter-scale single crystals. The reason is that a large number of novel NLO compounds are easy to oxidize, melt inconsistently or decompose at a temperature lower than the melting point, and polycrystalline materials are difficult to synthesize in large quantities, and it is very difficult to obtain centimeter-scale single crystals. Therefore, it is of great significance to explore and develop a method suitable for crystal growth of such compounds. [0003] It is well known tha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/10
CPCC30B11/00C30B11/006C30B29/10
Inventor 陈玲王国强吴立明吴新涛
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products