Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Capsule quantum dots and light emitting method, preparation method and display apparatus

A technology of light-emitting diodes and display devices, which is applied in chemical instruments and methods, light-emitting materials, semiconductor devices, etc., and can solve problems such as inability to use, low luminous efficiency of quantum dot film layers, and fluorescence quenching

Inactive Publication Date: 2016-06-29
BOE TECH GRP CO LTD
View PDF8 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For those with lower precision requirements, silk screen printing and other technologies can usually be used to achieve; for high precision requirements, exposure and development techniques are used. However, the photoinitiator used in the exposure and development process usually leads to fluorescence quenching, and the prepared quantum The luminous efficiency of the dot film layer is so low that it cannot be used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capsule quantum dots and light emitting method, preparation method and display apparatus
  • Capsule quantum dots and light emitting method, preparation method and display apparatus
  • Capsule quantum dots and light emitting method, preparation method and display apparatus

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0053] The embodiment of the present invention also provides a figure 2 The method for preparing capsule quantum dots is shown as Image 6 Shown, including:

[0054] S100. Mix the submicron or micron mesoporous material 10 and the quantum dots 20 in the thermosetting resin and stir them evenly.

[0055] Here, the quantum dots 20 can be fully absorbed in the pores of the mesoporous material 10 by uniform stirring.

[0056] Among them, for the amount of the mesoporous material 10, the thermosetting resin and the quantum dots 20, the quantum dots 20 can be fully absorbed in the pores of the mesoporous material 10, and the thermosetting resin can encapsulate the pores of the mesoporous material 10. .

[0057] In order to improve the utilization rate of the light emitted by the quantum dots 20 and prevent the light emitted by the quantum dots 20 located in the middle hole of the mesoporous material 10 from being absorbed or blocked by the mesoporous material 10 when exiting, it is prefera...

specific Embodiment

[0063] A specific example is provided below to describe the preparation method of capsule quantum dots in detail:

[0064] The silica mesoporous material and the quantum dots 20 are mixed in the thermosetting resin, and the mixture is sufficiently uniformly stirred, so that the quantum dots 20 are fully absorbed into the pores of the silica mesoporous material. Then the system is slowly heated. During the heating process, the system is stirred at a certain rate. Finally, the quantum dots can be encapsulated in the pores of the silica mesopores by means of cross-linking using thermosetting resin to form capsule quantum dots.

[0065] The embodiment of the present invention also provides a method for manufacturing a light-emitting diode, refer to image 3 As shown, it includes forming a first electrode 50, a quantum dot layer 60, and a second electrode 70 on the base substrate 40 in sequence.

[0066] Among them, such as Figure 7 As shown, forming the quantum dot layer 60 includes:

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the invention provide capsule quantum dots and a light emitting method, a preparation method and a display apparatus, relates to the display technical field, and avoids the problem of fluorescence quenching caused by the reason that a photoinitiator is in contact with quantum dots when a patterned quantum dot layer is formed through a patterning process. The capsule quantum dots comprise a submicron-level or micro-level mesoporous material, the quantum dots absorbed to the holes of the mesoporous material, and a packaging material for packaging the quantum dots into the holes of the mesoporous material. The preparation method is used for manufacturing the quantum dot layer patterns.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to a capsule quantum dot, a light emitting diode, a preparation method and a display device. Background technique [0002] Quantum dots (QDs) are composed of a finite number of atoms, with three dimensions on the order of nanometers. Because it can receive excitation light to produce fluorescence, and has the characteristics of narrow excitation spectrum and wide emission spectrum, and by changing the size of quantum dots, it can make its emission spectrum different. Therefore, quantum dot materials have been applied in the field of display technology. To improve luminous efficiency and color gamut. [0003] However, in the actual application of quantum dots as the light-emitting layer, the quantum dot film needs to be patterned. The traditional process is realized by exposure, development and printing. For those with lower precision requirements, silk-screen printing and other...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/54H01L33/00
CPCH01L33/54H01L2933/0033H10K59/12C09K11/08H01L27/1214C09K11/025H10K50/115
Inventor 祝明姚继开谷新齐永莲
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products