Flexible pressure sensor and preparation method thereof

A pressure sensor and flexible technology, applied in the field of sensors, can solve the problems of poor stability and limited sensitivity improvement, and achieve the effects of preventing deformation, improving sensitivity, and overcoming high cost

Inactive Publication Date: 2016-07-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the PDMS film with micro-nano structure can improve the sensitivity of the flexible pressure sensor, only the contact effect

Method used

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  • Flexible pressure sensor and preparation method thereof
  • Flexible pressure sensor and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0028] A method for preparing a flexible pressure sensor specifically includes the following steps:

[0029] Step 1. Preparation of the first micro-nano structure PDMS film and the first CNT film: a) Cut a 6-inch silicon wafer into 3cm×3cm size, and then ultrasonically clean in acetone and ethanol for 15-30 minutes, and then use deionized water Rinse and dry with nitrogen; b) Place the silicon wafers cleaned and dried in the previous step in the vacuum chamber of the three-dimensional mobile platform, and SF is passed into the vacuum chamber 4 After gas, the energy density is 0.42J / cm 2 , The number of pulses is 612.5, and the femtosecond laser with energy of 0.1mJ performs scanning and ablation at a speed of 1mm / s to obtain black silicon. The SEM image is as follows figure 2 As shown; c) the black silicon obtained in the previous step was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 15-30 minutes, dried by nitrogen, and immersed in TMCS (trimethylchl...

Example Embodiment

[0033] Example

[0034] A method for preparing a flexible pressure sensor specifically includes the following steps:

[0035] Step 1. Prepare the first micro-nano structured PDMS film and the first CNT film: a) Cut a 6-inch silicon wafer into 3cm×3cm size, and then ultrasonically clean it in acetone and ethanol for 15 minutes, and then rinse with deionized water. Nitrogen drying; b) Place the silicon wafers cleaned and dried in the previous step in the vacuum chamber of the three-dimensional mobile platform, and SF is passed into the vacuum chamber 4 After gas, the energy density is 0.42J / cm 2 , The number of pulses is 612.5, and the femtosecond laser with energy of 0.1mJ performs scanning and ablation at a speed of 1mm / s to obtain black silicon. The SEM image is as follows figure 2 As shown; c) The black silicon obtained in the previous step was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 15 minutes. After drying with nitrogen, it was immersed in TMC...

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Abstract

The invention relates to a flexible pressure sensor and a preparation method thereof and belongs to the field of sensors. The flexible pressure sensor successively comprises, from top to bottom, a first micro nano structure PDMS film, a first CNT film, a millimeter structure PDMS layer, a second CNT film, and a second micro nano structure PDMS film. The millimeter structure PDMS layer comprises two strip-shaped PDMS films on both ends of the first CNT film and with thicknesses from 1 to 2mm. The surfaces of the first micro nano structure PDMS film and the second micro nano structure PDMS film are conical structures. The micro nano structure PDMS films prepared by using black silicon as a template is used as the electrode substrate of the pressure sensor, the CNT films are used as the electrodes of the pressure sensor, and the millimeter structure PDMS layer is introduced between the upper electrode and the lower electrode. Thus, the pressure sensor is greatly increased in sensitivity and good in stability.

Description

technical field [0001] The invention belongs to the field of sensors, and in particular relates to a flexible pressure sensor and a preparation method thereof. Background technique [0002] Flexible pressure sensors are flexible electronic devices that can convert stress into electrical signals. Generally, the conversion of mechanical quantities to electrical signals is achieved through capacitive effects, piezoelectric effects, or piezoresistance effects. At present, flexible pressure sensors are widely used in flexible touch screens, intelligent robots , mobile medical and mechanical structure damage detection and other fields. [0003] The resistive flexible pressure sensor is favored by the industry and the research community because of its simple device structure, simple post-data processing circuit and high sensitivity; the counter electrode flexible pressure sensor is a resistive flexible pressure sensor, and its device The structure is simple, the sensitivity is hig...

Claims

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Application Information

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IPC IPC(8): G01L1/18
CPCG01L1/18
Inventor 魏雄邦肖伦全勇陈志庞韩英蒋昆
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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