Method and system for cleaning contaminated silicon carbide particles
A technology of silicon carbide and particles, applied in chemical instruments and methods, fine working devices, separating solids from solids with airflow, etc., can solve problems such as inconsistency in economic benefits
Inactive Publication Date: 2016-07-13
METALLKRAFT
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Problems solved by technology
Separation according to this principle is therefore not economical for industrial production of, for example, Si wafers
Method used
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[0063] Example: Cleaning of contaminated FEPAF800 silicon carbide particles
[0064] Some users use silicon carbide made according to FEPAF800, suspended in polyethylene glycol as a cutting medium. After use, the suspension will be full of tiny impurities, causing the particle size distribution to shift outside the desired narrow range.
[0065] With the method of the present invention, it is intended to clean the contaminated silicon carbide particles to conform to the following particle size distribution:
[0066] D3 <18.00 microns
[0067] D507.00 microns to 9.00 microns
[0068] D94> 4.00 microns
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The invention relates to a method and a system for cleaning contaminated silicon carbide (SiC) particles, and in particular, the contaminated SiC particles are cleaned by removing fine grain particles adhering to the contaminated SiC particles after being used in suspension in a cutting medium for the cutting or sawing of silicon wafers for solar cells and electronic objects often called spent sawing sludge.
Description
Technical field [0001] The present invention relates to a method and system for cleaning contaminated silicon carbide (SiC) particles, especially when SiC particles are used to cut or cut silicon wafers of solar cells and electronic objects, a cutting medium suspension (often referred to as cutting After spent sawing sludge), the contaminated SiC particles are cleaned by removing the fine particles adhering to the contaminated SiC particles. Background technique [0002] When cutting thin silicon wafers (generally referred to as "wafers"), silicon carbide (SiC) particles of specific grit sizes (such as FEPA categories F500, F600, and F800) are dispersed in an organic liquid to form a suspension, which serves as a cutting medium For use. The most common dispersant is an organic glycol liquid, such as polyethyleneglycol or di-propyleneglycol. Sometimes surfactants are added to the suspension to reduce surface tension. [0003] Cutting is usually performed using a wire cutter with ...
Claims
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IPC IPC(8): B07B9/02B28D5/00B24B55/12
CPCB07B9/02B24B55/12B28D5/007Y02P70/10
Inventor 蔡伟明杨辛德斯兰
Owner METALLKRAFT