Low-power and high-linearity CMOS temperature sensor

A temperature sensor, high linearity technology, used in thermometers, thermometers and instruments with directly sensitive electrical/magnetic components, etc., can solve the problem of incompatibility between power consumption and accuracy

Active Publication Date: 2016-07-20
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Abstract
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Problems solved by technology

Power consumption and accuracy are the main technical indicators for measuring CMOS integrated temperature sensors. Although today's CMOS integrated temperature sensors have made great progress in these

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  • Low-power and high-linearity CMOS temperature sensor
  • Low-power and high-linearity CMOS temperature sensor

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Embodiment Construction

[0015] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0016] Before introducing the present invention, first explain the theoretical basis of the present invention: a forward bias, base-collector short-connected PNP triode (the collector of the PNP transistor under the CMOS technology is made up of substrate, must be grounded, and current only can be injected from the emitter), its emitter current I E and emitter-base junction voltage V be Th...

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Abstract

The invention discloses a low-power and high-linearity CMOS temperature sensor which at least includes: a starting circuit, a temperature-related current generating circuit, and a temperature sensing circuit. The starting circuit includes three P type MOS transistors each having current consumption at pA level when a system is working normally, and serves to prevent a circuit from being locked at a cut-off state ; the temperature-related current generating circuit is connected to the starting circuit and uses subthreshold value characteristics of MOS transistors to generate a current which has low power and is temperature-related. The temperature sensing circuit, through a current mirror, provides the current generated by the temperature-related current generating circuit for a base of the PNP transistor and the collector of which are in shorted connection, and generates a voltage which is linearly related to temperature at an emitter electrode of the PNP transistor. According to the invention, the temperature sensor herein is an integrated low-power and high-linearity temperature sensor which is based on CMOS technology.

Description

technical field [0001] The invention relates to a temperature sensor circuit, in particular to a CMOS temperature sensor with low power consumption and high linearity. Background technique [0002] Temperature is a basic physical phenomenon. It is the most common and important process parameter used in the production process. Whether it is industrial and agricultural production, or scientific research and national defense modernization, it is inseparable from temperature measurement. Therefore, in various sensors , the temperature sensor is the most widely used one. The integrated temperature sensor came out in the 1980s. It was developed on the basis of the PN junction temperature sensor and has the characteristics of small size, good stability and low price. [0003] At present, the main implementation methods of the CMOS integrated temperature sensor include: a temperature sensor based on a MOS transistor and a CMOS BJT temperature sensor based on a parasitic bipolar tra...

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Application Information

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IPC IPC(8): G01K7/01
Inventor 梅年松张钊锋
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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