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A kind of lead selenide quantum dot-graphene composite material and preparation method thereof

A composite material and graphene technology, applied in graphene, chemical instruments and methods, binary selenium/tellurium compounds, etc., can solve the problems of expensive organic reagents, unstable quantum dots, high operating temperature, etc., and achieve excellent thermoelectric performance , Excellent electron transport effect, simple process effect

Active Publication Date: 2017-11-10
TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The organic phase synthesis method uses a large amount of organic solvents, which has the advantage of being able to prepare monodisperse quantum dots, but the disadvantage is that the operating temperature is high, and the organic reagents are expensive and highly toxic.
The aqueous phase synthesis method uses water as a solvent, which has the advantages of low cost, simple operation, and low toxicity, but the prepared quantum dots are unstable and easy to agglomerate.

Method used

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  • A kind of lead selenide quantum dot-graphene composite material and preparation method thereof
  • A kind of lead selenide quantum dot-graphene composite material and preparation method thereof

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Embodiment 1

[0034] A lead selenide quantum dot-graphene composite material, the lead selenide quantum dot is supported on the surface of graphene, the quantum dot size is 10-30nm, the number of layers of graphene is about 1-5 layers, and the length and The width is in the range of 500nm to 2.0μm, and the mass ratio of graphene and lead selenide quantum dots is 0.34:1.

[0035] The preparation method of the above-mentioned lead selenide quantum dot-loaded graphene composite material specifically comprises the following steps:

[0036] 1) Add 100mg of graphite oxide to 100ml of deionized water, ultrasonically disperse for 1 hour to obtain a graphene oxide solution; add 0.35g of lead nitrate (0.001mol) to the obtained graphene oxide solution, stir and let it stand for a while, then add a small amount of ammonia water dropwise Adjust the pH to 9 to obtain a graphene oxide-lead ion complex solution;

[0037] 2) in N 2 Under protection, mix 10ml deionized water and 0.15gNaHB 4 (0.0039mol) mi...

Embodiment 2

[0042] A lead selenide quantum dot-graphene composite material, the lead selenide quantum dot is supported on the surface of graphene, the quantum dot size is 10-30nm, the number of layers of graphene is about 1-5 layers, and the length and The width is in the range of 500nm to 2.0μm, and the mass ratio of graphene and lead selenide quantum dots is 0.34:1.

[0043] The preparation method of the above-mentioned lead selenide quantum dot-loaded graphene composite material specifically comprises the following steps:

[0044] 1) Add 100mg of graphite oxide to 100ml of deionized water, ultrasonically disperse for 1 hour to obtain a graphene oxide solution; add 0.35g of lead nitrate (0.001mol) to the obtained graphene oxide solution, stir and let it stand for a while, then add a small amount of ammonia water dropwise Adjust the pH to 10 to obtain a graphene oxide-lead ion complex solution;

[0045] 2) in N 2 Under protection, mix 10ml deionized water and 0.15gNaHB 4 (0.0039mol) m...

Embodiment 3

[0050] A lead selenide quantum dot-graphene composite material, the lead selenide quantum dot is supported on the surface of graphene, the quantum dot size is 10-30nm, the number of layers of graphene is about 1-5 layers, and the length and The width is in the range of 500nm to 2.0μm, and the mass ratio of graphene and lead selenide quantum dots is 0.58:1.

[0051] The preparation method of the above-mentioned lead selenide quantum dot-loaded graphene composite material specifically comprises the following steps:

[0052] 1) Add 200mg of graphite oxide to 200ml of deionized water, ultrasonically disperse for 2 hours to obtain a graphene oxide solution; add 0.20g of lead nitrate (0.0006mol) to the obtained graphene oxide solution, stir and let stand for a while, add a small amount of ammonia water dropwise Adjust the pH to 9 to obtain a graphene oxide-lead ion complex solution;

[0053] 2) in N 2 Under protection, mix 20ml of deionized water and 0.30g of NaHB 4 (0.0078mol) m...

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Abstract

The invention provides a lead selenide quantum dot / graphene composite material and a preparation method thereof. The composite material is prepared with graphene oxide sheets as a hard template through an ionic complexing method. Firstly, through the complexing and electrostatic effects between carboxylic groups in the graphene oxide and soluble lead salt, lead ions are immobilized on the surface of the graphene oxide, and then a less amount of an alkaline solution is dropwisely added slowly, wherein a certain interval is maintained between graphene oxide sheets through electrostatic repulsion between hydroxide ions and carboxylate ions. A selenium precursor solution is prepared under protective of nitrogen and then is added to the graphene oxide / lead ion complex to to be in a reflux reaction. A reduction agent is then added to reduce the graphene oxide sheets to prepare the lead selenide quantum dot / graphene composite material. The method is simple in operation, is convenient to operate and is repeatable. The composite material has high electron transportation performance of graphene, is high in Seebeck coefficient, and has excellent application prospect in the field of thermoelectricity.

Description

technical field [0001] The invention relates to the field of inorganic materials, in particular to a lead selenide quantum dot-graphene composite material and a preparation method thereof. Background technique [0002] Since 2004, scientists have discovered that graphene can exist as a single-layer graphite sheet, and the mechanical, thermal, optical and electrical properties of graphene have been widely studied; moreover, due to the unique properties of graphene in mechanics, thermal, optical and electrical Graphene will have broad application prospects in the fields of electronic circuits, conductive films, catalysis, light guides, invisibility, and composite material reinforcement. [0003] Lead selenide is a group IV-VI semiconductor compound with a narrow band gap, and it has a wide range of applications in infrared detection, thermoelectricity and other fields. This kind of material has narrow band gap, good photoconductive effect, low noise, and sensitive response to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04C01B32/184
CPCC01B19/007C01B2204/04C01P2002/72C01P2004/04C01P2004/64C01P2004/82
Inventor 杜飞鹏李晶晶谢岁岁张云飞吴艳光蒋灿
Owner TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV
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