A nanowire device based on bridge growth and its preparation method

Abstract

The invention relates to a nanowire device based on bridging growth and a manufacturing method thereof. The nanowire device based on bridging growth comprises an insulation substrate provided with a groove structure, conductive films and a nanowire, wherein the conductive films are arranged on two side walls of the groove structure, the conductive film on one side wall is taken as a source electrode of the nanowire device, the conductive film on the other side wall is taken as a drain electrode of the nanowire device, and the source electrode and the drain electrode are connected through the nanowire. The nanowire device is advantaged in that the process is simple, and electrical contact performance is excellent; the nanowire device can be completely manufactured in a nanowire growth process, traditional steps such as nanowire stripping, transferring and arrangement are omitted, pollution and damage to the surface of the nanowire are eliminated, and electrical contact characteristics between a metal electrode and the nanowire are improved.

Description

technical field [0001] The invention relates to the field of nanowire devices, in particular to a bridge growth-based nanowire device and a preparation method thereof, which can be used to prepare nanowire electronic devices and optoelectronic devices. Background technique [0002] Nanotechnology is considered to be one of the three major science and technologies of the 21st century. Among them, semiconductor nanowires are considered to be the basic structure of micro-nano electronic devices and photonic devices due to their unique one-dimensional quantum structure [Mater. Today, 9 (2006) 18-27]. [0003] Although semiconductor nanowires have important application prospects, the practical and industrialization of nanowire devices still needs to solve a series of problems, the key issue of which is how to manipulate, assemble and process extremely thin nanowires. At present, the preparation of nanowire devices usually includes the following three steps [Nanotechnology, 24 (2...

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Problems solved by technology

The above preparation method has the following disadvantages: the process steps are complicated; steps such as the stripping and arrangement of the nanowires require the use of various chemical reagents, which will pollute (or damage) the surface of the nanowires; the conductive electrode and the nanowires are in physical contact, and External contaminants introduced between the surface of the nanowire and the electrode will degrade the electrical contact characteristics

But these methods have the following disadvantages: 1. Need to prepare semiconductor steps (or grooves) on the substrate, must be electrically isolated (or electrically insulated) between the steps (or grooves) and the substrate, so need to adopt wafer bonding Or ion implantation and other processes, forming an electrical isolation layer inside the substrate, resulting in a complex manufacturing process; 2. The current path of the device is "metal electrode - the surface, interior and sidewall of the semiconductor step (or groove) - semiconductor nanometer Wire - the sidewall, interior and surface of the semiconductor step (or groove) - metal electrode", so the semiconductor step (or groove) is separated between the nanowire and the metal electrode, thereby increasing the electron transmission loss, and the metal electrode It is also a physical contact with semiconductor steps (or grooves), and the electrical contact characteristics are still not good; 3. For nanowire devices, it is usually necessary to perform n-type (or p-type) doping on different regions of the nanowire, and the corresponding The sidewall of the semiconductor step (or groove) in contact with it also needs to be doped with n-type (or p-type), which increases the complexity of the process

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