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Semiconductor device and manufacturing method thereof, array substrate, display device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve the effect of improving performance, long channel, and small size

Active Publication Date: 2017-11-07
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a semiconductor device and its manufacturing method, an array substrate, and a display device, which are used to solve the problem of contradiction between the small size and high driving capability of a thin film transistor

Method used

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  • Semiconductor device and manufacturing method thereof, array substrate, display device
  • Semiconductor device and manufacturing method thereof, array substrate, display device
  • Semiconductor device and manufacturing method thereof, array substrate, display device

Examples

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Embodiment 1

[0027] to combine figure 1 and figure 2 As shown, a thin film transistor is provided in this embodiment, which includes a semiconductor layer 1 disposed on a substrate 100 , a gate electrode 3 , a source electrode 4 and a drain electrode 5 . When the thin film transistor is in the open state, the semiconductor layer 1 between the source electrode 4 and the drain electrode 5 forms a conductive channel. The extension length from one side of the electrode 4 to the side close to the drain electrode 5 .

[0028] Wherein, the semiconductor layer 1 includes a first part and a second part, the plane where the first part is located intersects the plane where the substrate 100 is located, and the plane where the second part is located is parallel to the plane where the substrate 100 is located, so that the semiconductor layer 1 is parallel to the plane of the substrate 100 Both the direction and the direction perpendicular to the substrate 100 are distributed, so that under a certain...

Embodiment 2

[0065] Based on the same inventive concept, combining image 3 and Figure 4 As shown, a semiconductor device is provided in this embodiment, including a semiconductor layer 1 disposed on a substrate 100, a first electrode 40, a first electrode 50 and two gate electrodes 3, the gate electrode 3 is connected to the first electrode 40, the second An insulating layer is disposed between the two electrodes 50 and the semiconductor layer 1 , one end of the semiconductor layer 1 is in electrical contact with the first electrode 40 , and the opposite end is in electrical contact with the second electrode 50 . By arranging two gate electrodes 3, the semiconductor device can realize the function of the thin film transistor, and at the same time, the threshold voltage can be adjusted, and the performance of the semiconductor device can be improved.

[0066] Wherein, the semiconductor layer 1 includes a first part and a second part, the plane where the first part is located intersects t...

Embodiment 3

[0133] In the array substrate and display device in the embodiment of the present invention, the array substrate adopts the thin film transistor in embodiment 1 or the semiconductor device in embodiment 2, and the display device adopts the above-mentioned array substrate. Next, the length of the semiconductor layer of the thin film transistor is increased, which can provide a longer conductive channel and improve the performance of the thin film transistor. Moreover, thin film transistors with smaller sizes can be realized, and the performance of thin film transistors can be guaranteed, which is suitable for high-resolution products.

[0134] The display device may be a liquid crystal display device, an organic light emitting diode display device, or other display devices including thin film transistors.

[0135] The display device may be any product or component with a display function such as a display substrate, a display panel, an electronic paper, a mobile phone, a tablet...

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Abstract

A semiconductor device, an array substrate, and a display device, and their fabrication methods are provided. An exemplary semiconductor device includes a first electrode, an insulating layer, and a second electrode, over a substrate. A conductive layer is on the insulating layer. A semiconductor layer is on the first electrode, on a first sidewall of the insulating layer, on the conductive layer, on the second sidewall of the insulating layer, and on the second electrode. A first gate electrode is over a portion of the semiconductor layer that is on the first sidewall of the insulating layer. A second gate electrode is over a portion of the semiconductor layer that is on the second sidewall of the insulating layer.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a semiconductor device, a manufacturing method thereof, and a display device. Background technique [0002] Thin film transistors are widely used in display devices due to their low power consumption, small size, and mature technology. Wherein, the longer the channel length of the thin film transistor is, the larger the turn-on current is, and the performance of the thin film transistor is better. The length of the TFT channel is the extending distance from the channel side close to the source electrode to the side close to the drain electrode. [0003] For high-resolution display devices, small-sized thin-film transistors are required, and the requirements for process realization, electrical performance, and reliability of thin-film transistor array substrates are higher. Especially in the organic electroluminescent diode display technology, the driving thin film transistor g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/10H01L21/336
Inventor 刘政李小龙左岳平皇甫鲁江
Owner BOE TECH GRP CO LTD
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