Thin film transistor and manufacturing method thereof, array substrate and manufacturing device thereof and display device

Abstract

Provided are a thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing device thereof and a display device. The thin film transistor comprises an active layer, an amorphous silicon connecting layer and a source drain electrode layer. The active layer is provided with a groove area, a source electrode area and a drain electrode area. A forming material of the groove area comprises polycrystalline silicon. The amorphous silicon connecting layer is located at one side of the active layer and comprises a first connecting part and a second connecting part spaced from the first connecting part. The source drain electrode layer comprises a source electrode and a drain electrode spaced from the source electrode. The source electrode is electrically connected with the source electrode area through the first connecting part. The drain electrode is electrically connected with the drain electrode area through the second connecting part. According to the thin film transistor and the manufacturing method thereof, the array substrate and the manufacturing device thereof and the display device, the manufacturing process of the polycrystalline silicon thin film transistor can be simplified.

Description

technical field [0001] Embodiments of the present invention relate to a thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device. Background technique [0002] Polysilicon thin film transistors have been widely used in various displays due to their advantages such as high electron mobility and stability. [0003] However, the manufacturing steps of polysilicon thin film transistors are numerous, requiring about 10 exposure processes. Taking the low-temperature polysilicon thin film transistor as an example, its manufacturing process includes: a laser annealing process for forming polysilicon, two ion implantation processes for forming an active layer with a lightly doped region, a heavily doped region, and a channel region, And high temperature processes such as dehydrogenation, hydrogenation and activation. These complex processes make low-temperature polysilicon thin film transistors usually developed and ma...

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Problems solved by technology

These complex processes make low-temperature polysilicon thin film transistors usually developed and mass-produced on the sixth-generation line or below, with low yield, large equipment investment, and poor compatibility with amorphous silicon thin film transistor production lines

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