Semiconductor device and associated method of manufacture

Abstract

The disclosure relates to a semiconductor device comprising a body having: a first surface and an opposing second surface; a first semiconductor layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, the plurality of active trenches extending from the first surface into the first semiconductor layer and having an active trench width, and a plurality of active cells, each active cell provided in the first semiconductor layer adjacent to an active trench, the active cells having an active cell width; and a termination region at a periphery of the first surface comprising: at least one termination trench, the at least one termination trench extending from the first surface into the first semiconductor layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than the active cell width, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductor layer of the body, and wherein conductive material is disposed on the first insulating layer within each of the active trenches.

Description

technical field [0001] The present disclosure relates to semiconductor devices and associated fabrication methods. In particular, but not exclusively, the present disclosure relates to reduced surface field (RESURF) devices, such as trench Schottky diodes. Background technique [0002] Conventional reduced surface field (RESURF) semiconductor devices are fabricated on semiconductor substrates using epitaxial growth and implantation processes. Such devices may be vertical (where current flows through the device substantially perpendicular to the plane of the semiconductor substrate) or horizontal (where current flows through the substrate through the device). [0003] Typical examples of RESURF structures include diodes, transistors such as MOSFETs, or silicon controlled rectifiers with a region commonly called the drift region, which is depleted under reverse bias with a voltage much less than the breakdown voltage. A higher reverse bias voltage will result in a relatively...

AI Technical Summary

Problems solved by technology

However, this approach may require additional photolithography and implantation steps and thus may not provide semiconductor devices capable of achieving the same breakdown voltage performance as trench terminated devices

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