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Data storage device and method of driving the same

一种数据、次数的技术，应用在数据储存设备领域，能够解决数据读取失败等问题

Active Publication Date: 2016-09-14
SK HYNIX INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, data read failures may occur

Method used

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  • Data storage device and method of driving the same
  • Data storage device and method of driving the same
  • Data storage device and method of driving the same

Examples

Experimental program
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Embodiment Construction

[0041] Embodiments of the present disclosure will now be described more fully with reference to the accompanying drawings. However, this disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and These embodiments will fully convey the concept of the present invention to those skilled in the art.

[0042] Like references refer to like elements throughout. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0043] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular form "the" is also intended to include the plural unless the context clearly dictates otherwise. It will also be understood that when used in this specification, the ter...

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Abstract

The invention provides a data storage device compirisng a non-volatile memory device and a method of driving the same. A non-volatile memory device includes a memory cell array including a plurality of memory cells; and a control circuit. Each of the plurality of memory cells may comprise a channel layer, a charge trap layer disposed over the channel layer, and a control electrode disposed over the charge trap layer, the charge trap layer being shared by the plurality of memory cells in the memory cell array. The charge trap layer may comprise program regions respectively disposed below the control electrodes of the plurality of memory cells; and charge spread blocking regions, each of which is disposed between two adjacent ones of the program regions and between two adjacent ones of the control electrodes. The control circuit may be configured to control the memory cell array so that a potential barrier is generated in the charge spread blocking regions by charging the charge spread blocking regions with charges having the same polarity as that of program charges stored in the program regions.

Description

technical field [0001] The present disclosure relates to semiconductor memory technology, and more particularly, to a data storage device including a nonvolatile memory device and a method of driving the same. Background technique [0002] Recently, as the demand for portable digital application devices such as digital cameras, MP3 players, personal digital assistants (PDAs), smart phones, etc. has increased, the nonvolatile memory device market has grown rapidly. Examples of non-volatile memory devices include read only memory (ROM), programmable ROM (PROM), erasable ROM (EROM), electrical EPROM (EEPROM), and flash memory devices. Among nonvolatile memory devices, flash memory devices (for example, NAND flash memory devices) are one of the most popular nonvolatile memory devices, which make miniaturization and high performance of digital application equipment a possible. [0003] In a charge trap type flash memory device among flash memory devices, charges are supplied to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/14G11C16/26
CPCG11C16/10G11C16/14G11C16/26H01L29/792G11C16/0466G11C16/0483G11C16/3472G11C16/16H10B43/35H10B43/27G11C16/3404
Inventor 李宗昊姜昊中崔洛龙韩炳日朴景真郑圣蓉
Owner SK HYNIX INC