Method for manufacturing monocrystal material thin layer structure on supporting substrate

A technology for supporting substrates and single crystal materials, which is used in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of inability to prepare high-quality single crystal material films, and achieve the effect of shortening the preparation cycle and saving production costs.

Inactive Publication Date: 2016-09-21
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the above-mentioned deficiencies in the prior art, the present invention proposes a method for manufacturing a thin-layer structure of a single crystal material o

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  • Method for manufacturing monocrystal material thin layer structure on supporting substrate
  • Method for manufacturing monocrystal material thin layer structure on supporting substrate
  • Method for manufacturing monocrystal material thin layer structure on supporting substrate

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Embodiment Construction

[0038] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0039] see Figure 1 to Figure 4 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and th...

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Abstract

The present invention provides a method for manufacturing a single crystal material thin layer structure on a supporting substrate, comprising: providing a single crystal substrate, using one surface of the single crystal substrate as an injection surface, injecting performing co-implantation of the first type of ions and the second type of ions in the bottom to form a defect layer at a preset depth of the single crystal substrate; providing a supporting substrate so that the implanted surface of the single crystal substrate is in contact with the The surface of the support substrate is in close contact; part of the single crystal substrate is peeled off along the defect layer, and a part of the single crystal substrate is transferred to the support substrate to form a thin film on the support substrate. layer structure. The present invention adopts co-implantation of two different types of ions in the single crystal substrate, can prepare a single crystal material thin film, effectively reduces the total ion implantation dose required for stripping and transferring the single crystal material thin film layer, and shortens the preparation cycle , which saves the production cost; it can also solve the problem that some materials cannot be stripped by single ion implantation.

Description

technical field [0001] The invention belongs to the technical field of single crystal material preparation, in particular to a method for manufacturing a thin layer structure of single crystal material on a support substrate. Background technique [0002] Single crystal thin films have a wide range of uses in reducing device volume, reducing power consumption, and expanding material applications. The current method of processing thin film materials by mechanical cutting and grinding and polishing is limited by the mechanical strength of the material itself, and the thin film is limited to more than tens of microns, which cannot reach a thickness of about one micron. The growth of thin films on supporting substrates by physical or chemical methods has been widely used, but this method is greatly limited by the substrate material. There is often a lattice mismatch and thermal expansion coefficient mismatch between the grown film and the substrate, and the film is usually poly...

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Application Information

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IPC IPC(8): H01L21/762H01L21/265
CPCH01L21/76254H01L21/265
Inventor 欧欣黄凯贾棋游天桂王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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