Method for preparing InP thin film heterogeneous substrate

A technology of heterogeneous substrates and thin films, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of high implantation dose, and achieve the effects of improving quality, shortening preparation cycle, and saving production costs.

Inactive Publication Date: 2017-05-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing an InP thin film heterogeneous substrate, which is used to solve the problem of low temperature or high temperature implantation and The problem of high injection dose required

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing InP thin film heterogeneous substrate
  • Method for preparing InP thin film heterogeneous substrate
  • Method for preparing InP thin film heterogeneous substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] see Figure 1 to Figure 5 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing a InP thin film heterogeneous substrate. The method at least comprises the steps of providing an InP substrate which has an injection plane; carrying out ion co-implantation on the injection plane to form a defect layer at a preset depth of the InP substrate; providing a heterogeneous substrate, bonding the InP substrate and the heterogeneous substrate, and taking the injection plane of the InP substrate as a bonding interface; peeling part of the InP substrate along the defect layer, getting a part of the InP substrate transferred onto the heterogeneous substrate to form an InP thin film on the heterogeneous substrate to obtain the InP thin film heterogeneous substrate. By the scheme, the dosage of unitary ion injection required by peeling and transferring InP thin film cam be effectively reduced, the adoption of a sub-zero low temperature injection method to peel an InP material, which is reported in literature, is avoided simultaneously, then the preparation period is shortened, and the cost of production is saved; and low-temperature or high-temperature injection is not required, so that the additional energy consumption required by controlling injection temperature can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, in particular to a method for preparing an InP thin film heterosubstrate by ion co-implantation. Background technique [0002] InP is a III-V compound semiconductor, which has the advantages of wide band gap, fast electron mobility, high thermal conductivity, and good radiation resistance. InP devices can amplify high-frequency or short-wavelength signals. Combined with its good radiation resistance, it is often used to manufacture satellite signal receivers and amplifiers. The wide band gap makes the device highly stable and is not affected by external influences. smaller. In terms of optoelectronic integrated circuits, InP is now the only monolithic integrated semiconductor material that can support a light source. InP is a direct bandgap semiconductor that can be made into optical amplifiers, lasers, and photodetectors. In addition, InP can provide nanosecond Level modulati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/683
CPCH01L21/02543H01L21/6835H01L2221/68377
Inventor 欧欣林家杰游天桂黄凯
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap