Method for preparing single crystal oxide resistive variable memory using ion implantation stripping technology

Abstract

The present invention provides a method for preparing a single crystal oxide resistive variable memory using ion implantation stripping technology, comprising the following steps: 1) providing an oxide single crystal substrate; 2) performing self-implantation into the oxide single crystal substrate Ion implantation, and then form the lower electrode on the implanted surface; or form the lower electrode on the implanted surface, and then perform ion implantation into the oxide single crystal substrate from the implanted surface; 3) Provide a supporting substrate, and combine the structure and support obtained in step 2) Substrate bonding; 4) Peel off part of the oxide single crystal substrate along the defect layer to obtain an oxide single crystal film, and transfer the obtained oxide single crystal film and the lower electrode to the supporting substrate; 5) After oxidation The upper electrode is formed on the surface of the single crystal thin film. The invention effectively reduces the total ion implantation dose required for stripping and transferring the film, thereby shortening the preparation cycle and saving the production cost; at the same time, the method can also solve the problem that some materials cannot be stripped by single ion implantation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to a method for preparing a single crystal oxide resistive variable memory by using ion implantation stripping technology. Background technique [0002] Non-volatile memory is an important part of the semiconductor field, and occupies a pivotal position in the semiconductor industry. With the advancement of technology in recent years and the continuous popularization of consumer electronic products such as smartphones, mobile storage, and tablet computers, the consumption of non-volatile memory has been greatly promoted. The global memory market has a strong demand for non-volatile memory Demand has increased dramatically. Not only that, the market's requirements for memory are also increasing, such as high capacity, high speed, low power consumption, low price and so on. These requirements have further promoted the continuous development of existing ...

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Problems solved by technology

However, there are many problems in these traditional thin film preparation methods, for example, it is generally necessary to grow oxide thin films at relatively high temperatures, and it is difficult to be compatible with existing CMOS processes

In addition, due to factors such as lattice mismatch, thermal mismatch, and interface defects, these traditional thin film preparation methods cannot grow high-quality single crystal oxide thin films on polycrystalline metal bottom electrodes.

The resistive switching properties of materials are closely related to the defects in the material. The problems of amorphous or polycrystalline thin films as resistive switching oxide dielectric layers include: On the one hand, there are many different defects in both amorphous and polycrystalline thin films , which is a great challenge for the study of the resistance switching mechanism of materials; on the other hand, the distribution of defects in amorphous and polycrystalline thin films is random, which is very important for reducing device size, stabilizing and optimizing device parameters, reliability Research, etc. are the bottlenecks that are difficult to break through

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