Method for adjusting growth temperature of silicon carbide monocrystal

A silicon carbide single crystal, growth temperature technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of unstable temperature change, existence of production process, safety hazards, etc., to achieve stable temperature change and product quality. The effect of improving and high operational safety

Inactive Publication Date: 2016-09-28
JIANGSU BAIR PHOTOELECTRIC EQUIP CO LTD
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0002] At present, the temperature change of silicon carbide single crystal production is realized by adjusting the height of the induction coil or adjusting the power, the temperature change is unstable, the product quality is not ideal, and there are safety hazards in the production process

Method used

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Embodiment Construction

[0012] The present invention will be further described below in conjunction with embodiment.

[0013] The method for adjusting the growth temperature of silicon carbide single crystal according to the present invention comprises the following steps,

[0014] (1) Make the seed crystal and the crucible coaxial, and make the seed crystal and the crucible rotate along the opposite line;

[0015] (2) Control the melt temperature field and temperature distribution by controlling the crystal rotation speed and the crucible rotation speed;

[0016] (3) Make the induction coil immobile;

[0017] (4) By lifting and lowering the crucible, the plane of silicon carbide sublimation is adjusted to always be at the highest point of the magnetic field of the induction coil.

[0018] In step (1), bringing the seed crystal into contact with the silicon melt contained in the crucible, making the seed crystal coaxial with the crucible, and then pulling the seed crystal from the crucible to form ...

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Abstract

The invention relates to a method for adjusting the growth temperature of a silicon carbide monocrystal. The method comprises the following steps: enabling a seed crystal and a crucible to be coaxial and to rotate in opposite directions; controlling the temperature field and temperature distribution of a melt by controlling the crystal rotation speed and the crucible rotation speed; enabling an induction coil to be fixed; adjusting the silicon carbide subliming plane to be in the highest point of an induction coil magnetic field all the time by lifting the crucible. The method is stable in temperature change and high in product quality.

Description

technical field [0001] The invention relates to a temperature adjustment method, in particular to a temperature adjustment method for silicon carbide single crystal production. Background technique [0002] At present, the temperature change in the production of silicon carbide single crystal is realized by adjusting the height of the induction coil or adjusting the power. The temperature change is unstable, the product quality is not ideal, and there are safety hazards in the production process. Contents of the invention [0003] Purpose of the invention: The purpose of the invention is to overcome the deficiencies in the prior art and provide a method for regulating the growth temperature of silicon carbide single crystal with stable temperature change and high product quality. [0004] Technical solution: In order to solve the above technical problems, the method for adjusting the growth temperature of silicon carbide single crystal according to the present invention co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/36
CPCC30B15/20C30B29/36
Inventor 袁玉平闫鹏袁佳斌
Owner JIANGSU BAIR PHOTOELECTRIC EQUIP CO LTD
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