Starting voltage testing system and testing method for MOS transistor

Abstract

The invention provides a turn-on voltage test system and test method of a MOS transistor. Two source-measurement units are used to connect the drain and the substrate of the MOS transistor respectively, the output end of the operational amplifier is connected to the gate of the MOS transistor, and the operational amplifier The negative input terminal of the MOS transistor and the negative terminal of the DC current source are both connected to the source of the MOS transistor to form a turn-on voltage test system. When testing the turn-on voltage of the MOS transistor, a 0V voltage is input to the positive input terminal of the operational amplifier, through the DC current source Provide a current equal to the target current to the source of the MOS transistor, and then input the set voltage to the drain of the MOS transistor through the source measurement unit and simultaneously measure the voltage between the output terminal of the operational amplifier and the gate of the MOS transistor. The turn-on voltage of the MOS transistor is obtained, the measurement process is simple to operate, the measurement accuracy is improved, and the time required for the process of testing and determining the turn-on voltage is shortened.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to a test system and a test method for a turn-on voltage of a MOS transistor. Background technique [0002] To determine the turn-on voltage of the fabricated MOS transistor (MOSFET), a test needs to be carried out so as to accurately grasp the turn-on voltage of the MOS transistor. Please refer to figure 1 , which is a schematic diagram of an existing MOS transistor turn-on voltage testing system. Such as figure 1 As shown, the drain 11', the gate 12', the source 13' and the substrate 14' of the MOS transistor are sequentially connected with the first source measure unit SMU1, the second source measure unit SMU2, the third source measure unit SMU3 and the first source measure unit SMU3. Four source measure units SMU4 are connected, and the first source measure unit SMU1, the second source measure unit SMU2, the third source measure unit SMU3 and the fourth source m...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a turn-on voltage test system and test method of a MOS transistor, to solve the need for the test result of the turn-on voltage obtained by using the turn-on voltage test system of the prior art is not high and to determine the turn-on voltage time-consuming problem

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