Unlock instant, AI-driven research and patent intelligence for your innovation.

Separated three-dimensional vertical memory

A memory, three-dimensional technology, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problems of inability to reduce costs, increase costs, etc.

Inactive Publication Date: 2016-10-05
CHENGDU HAICUN IP TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For 3D-M V In other words, since the vertical memory strings 16X, 16Y adopt a complex back-end (BEOL) process, while the back-end process of the peripheral circuit 18 is relatively simple, the direct result of blindly integrating the memory strings 16X, 16Y and the peripheral circuit 18 Exactly, the peripheral circuit 18 has to be manufactured with the expensive process of manufacturing the memory strings 16X, 16Y, which not only fails to reduce the cost, but increases the cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Separated three-dimensional vertical memory
  • Separated three-dimensional vertical memory
  • Separated three-dimensional vertical memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] In the present invention, " / " represents the relationship of "and" or "or". For example, read / write voltage means read voltage, or write voltage, or read voltage and write voltage; address / data means address, or data, or address and voltage.

[0020] Figure 2A - Figure 2B Indicates a separation of 3D-M V 50. It contains a three-dimensional array chip 30 (three-dimensional circuit) and a voltage generator chip 40 (two-dimensional circuit). Wherein, the three-dimensional array chip 30 is built in three-dimensional space and contains multiple functional layers (ie storage layers), and the voltage generator chip 40 is built in two-dimensional space and contains only one functional layer. Separating 3D and 2D circuits into separate chips allows them to be optimized separately.

[0021] Figure 2A Separation in 3D-M V 50 is a 3D-M V The memory card includes an interface 54 capable of physically connecting with various hosts and communicating according to a communi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a separated three-dimensional vertical memory. The present invention provides a separated 3D-MV50 which includes at least one three-dimensional array chip 30 and at least one voltage generation chip 40. The three-dimensional array chip 30 includes a plurality of vertical storage string 16X and 16Y. At least one voltage generator assembly is located in the voltage generation chip 40 and is not located in the non-three-dimensional array chip 30. The three-dimensional array chip 30 and the voltage generation chip 40 have completely different back-end (BEOL) structure.

Description

technical field [0001] The present invention relates to the field of integrated circuit memories, and more specifically to three-dimensional vertical memories. Background technique [0002] Three-dimensional vertical memory (3D-M for short) V ) is a monolithic semiconductor memory that contains multiple vertical memory strings. 3D-M V Including three-dimensional read-only memory (3D-ROM) and three-dimensional random access memory (3D-RAM). 3D-ROM can be further divided into three-dimensional mask programmed read-only memory (3D-MPROM) and three-dimensional electrically programmed read-only memory (3D-EPROM). Based on its programming mechanism, 3D-M V It can contain memristor, resistive random-access memory (RRAM or ReRAM), phase-change memory (PCM), programmable metallization memory (PMM), or conductive-bridging random-access memory (CBRAM), etc. [0003] US Patent 8,638,611 discloses a 3D-M V , it is a vertical NAND (vertical NAND). Such as figure 1 As shown, the 3D...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/112H01L27/115H01L25/18H10B69/00
CPCH01L2924/181H01L2224/48091H01L2224/48145H01L2924/00014H01L2924/00012
Inventor 张国飙
Owner CHENGDU HAICUN IP TECH