A method for cleaning gallium arsenide single wafer

A single gallium arsenide and gallium arsenide technology, which is applied in the field of cleaning gallium arsenide single wafers, can solve the problems of high cost, harm to the human body, and pollution to the environment, and achieves reduced particle size, little harm to the human body, and no environmental pollution. The effect of pollution

Active Publication Date: 2018-10-19
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the sulfuric acid cleaning process is widely used in the compound semiconductor GaAs cleaning process, but there are many unsatisfactory places in the sulfuric acid cleaning process, which will produce quite different effects under different cleaning conditions. Improper cleaning will make the surface serious. Deviating from the stoichiometric ratio and causing roughening of the surface
In addition, there are ultraviolet ozone cleaning, vacuum heating cleaning, various chemical solvent cleaning, etc. Some of these cleaning methods use toxic chemical reagents, some are highly corrosive, and some will produce radiation, which is harmful to the human body. Harmful, polluting the environment, and some cost too much, etc.
[0003] At present, there is no relatively unified method for cleaning GaAs single wafers, and the cleaning methods of GaAs single wafers by various GaAs single wafer manufacturers are still in the stage of technical secrecy

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Clean the polished 2-inch gallium arsenide single-throw wafer in absolute ethanol for 20 seconds, rinse with deionized water for 30 seconds, rinse with very dilute potassium hydroxide solution for 5 seconds, rinse with deionized water for 60 seconds, and then rinse with deionized water for 30 seconds. Wash with SC1 solution for 20 seconds, rinse with deionized water for 100 seconds, and finally shake dry.

[0024] All the chemical reagents used are UP grade, the SC1 chemical solution used is the volume ratio ammonia water:hydrogen peroxide:deionized water=1:2:10, and the temperature of the very dilute potassium hydroxide solution used is 6°C, the SC1 chemical solution The temperature was 6°C, and the temperature of the deionized water was 10°C.

Embodiment 2

[0026] Clean the polished 4-inch gallium arsenide double-throw wafer in absolute ethanol for 30 seconds, rinse with deionized water for 60 seconds, rinse with very dilute ammonia solution for 10 seconds, rinse with deionized water for 60 seconds, and then rinse with SC1 Wash with liquid medicine for 25 seconds, rinse with deionized water for 120 seconds, and finally spin dry.

[0027] All the chemical reagents used are UP grade, the SC1 chemical solution used is the volume ratio ammonia water:hydrogen peroxide:deionized water=1:1:30, and the temperature of the very dilute ammonia solution used is 5°C, and the temperature of the SC1 chemical solution is 5°C, and the temperature of deionized water is 8°C.

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PUM

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Abstract

The invention relates to a method for cleaning a gallium arsenide single chip. The method includes the steps that the gallium arsenide single chip is cleaned with absolute ethyl alcohol after being subjected to polishing treatment, flushed with deionized water, then cleaned with an extremely-thin alkaline solution, flushed with deionized water, finally cleaned with SC1 medical liquid, flushed with deionized water and packaged after being subjected to spin-drying and inspection. To make the surface state of the single chip good, the ratio and temperature of the utilized solution should be paid attention to. Organic matter on the surface of the single chip is removed through cleaning with absolute ethyl alcohol and the alkaline solution, when cleaning is conducted with the SC1 liquid, hydrogen peroxide can oxidize a surface layer of gallium arsenide, ammonium hydroxide can dissolve oxides of arsenic and oxides of gallium, the surface layer is stripped, then rapid flushing is conducted with deionized water, the surface can be free of medical liquid residues, and thus the clean surface can be obtained.

Description

technical field [0001] The invention relates to a method for cleaning a gallium arsenide single chip, in particular to a method for cleaning a gallium arsenide single chip grown by LEC, VB and VGF. Background technique [0002] With the improvement of device integration, the size of a single device is getting smaller and smaller. In the process of device processing, the cleanliness of the material surface plays a role in determining the working performance, service life and reliability of the device, even more than that of the body. the material itself. If the quality of chemical cleaning is not high, the performance of the product will decline. GaAs is a binary compound, the surface has high activity, and the pollutants adsorbed on its surface are various. The most common are dust, organic matter, oxides, hydrocarbons and various gases. At present, the sulfuric acid cleaning process is widely used in the compound semiconductor GaAs cleaning process, but there are many un...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/02B08B3/04H01L21/02
CPCB08B3/02B08B3/04H01L21/02043H01L21/02082
Inventor 杨艺曹志颖
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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