Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for depositing a material

A technology of equipment and dielectric materials, which is applied in the field of deposition materials and equipment, and can solve problems such as film thickness reduction

Active Publication Date: 2016-10-12
SPTS TECH LTD
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] A known problem with PVD of AlN is that the deposited film thickness drops significantly on the radially outermost part of the substrate
This drop makes BAW filters impossible to fabricate from this portion of the wafer unless additional process steps are performed to accommodate this inherent variation in film thickness

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for depositing a material
  • Method and apparatus for depositing a material
  • Method and apparatus for depositing a material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] image 3 A PVD apparatus of the present invention is shown, generally depicted at 30 . Apparatus 30 includes a chamber 32 that houses a DC magnetron 34; a target 36 from which material is sputtered by the magnetron 34; and a substrate holder 38 that supports a substrate (not shown). shown), the desired material is deposited on the substrate. The device 30 further includes a coil 40 disposed around the body portion of the chamber 32 . exist image 3 In the embodiment shown, the chamber is cylindrical, although in principle other chamber shapes and other coil cross-sectional shapes could be used. For simplicity of presentation, other general aspects of the magnetron sputtering device, such as gas inlets and outlets, are not shown in image 3 shown in .

[0045] Pulsed DC power is applied to the target 36 from a DC power supply. DC power is applied to the coil 40 by a coil DC power supply 46 which is capable of varying the applied current. RF power is applied from t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method and apparatus for depositing a material. The invention provides a method of depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields; in which a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Description

technical field [0001] The present invention relates to a method of depositing material onto a substrate in a chamber by magnetron sputtering and related apparatus. Background technique [0002] Magnetron sputtering is a well known example of PVD (Physical Vapor Deposition). Magnetron sputtering is used to deposit a range of films onto a range of substrates. For example, it is known to deposit AlN films by pulsed DC magnetron sputtering. AlN films can be deposited with defined crystalline orientations, resulting in piezoelectric properties. The deposited films are thus capable of forming resonant structures at certain defined RF frequency bands. Films of this type have applications, for example, in the manufacture of bulk acoustic wave (BAW) devices and as filters for RF frequencies. Typically, BAW devices with a surface area of ​​a few square millimeters are assembled onto circular silicon substrates. The silicon substrate may be 200mm in diameter. The resonance frequ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/06
CPCC23C14/0641C23C14/35C23C14/0617C23C14/3485C23C14/351H01J37/3452H01J37/32669H01J37/3405H01J37/3467H01L21/02631H01L21/0254H01L21/02381C23C14/3407C23C14/345C23C14/50C23C14/54H01J37/345C23C14/10H01J37/32688H01J37/3426H01J37/3458H01J37/3461H01J37/3408H01J37/3411
Inventor 斯蒂芬·R·伯吉斯R·辛德曼阿米特·拉斯托吉保罗·埃杜拉多·利马C·L·威迪克斯保罗·理查斯科特·海莫尔丹尼尔·库克
Owner SPTS TECH LTD