Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Broadband vertical transition device

A vertical transition and broadband technology, applied in resonators, waveguide devices, electrical components, etc., can solve problems such as poor in-band characteristics, achieve low cost, clear design principles, and simple structures

Inactive Publication Date: 2016-10-19
UNIVERSITY OF MACAU
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this type of transition exhibits characteristics similar to a two-pole bandpass filter with poor in-band characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Broadband vertical transition device
  • Broadband vertical transition device
  • Broadband vertical transition device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0029] The present invention uses the first resonant mode of the slot line resonator and the two resonant modes excited by the microstrip line-slot line-microstrip line coupling structure to design a broadband vertical microstrip line-microstrip line transition device. For a two-layer or multi-layer dielectric board structure, a broadband vertical transition is formed by electromagnetically coupling the slot line resonators on the common ground with the top and bottom microstrip line resonators.

[0030] Such as figure 1 as shown, figure 1 It is a three-dimensional structural schematic diagram of a broadband vertical transition device with a center-symmetric feed structure provided by the present invention. The broadban...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a broadband vertical transition device. The broadband vertical transition device is of a two-layer or multi-layer dielectric slab structure and comprises a trough line resonator which is arranged on a public area between layers of the two-layer or multi-layer dielectric slab structure and has a regular shape, a microstrip line resonator arranged on the top layer of the two-layer or multi-layer dielectric slab structure, and a microstrip line resonator arranged on the bottom layer of the two-layer or multi-layer dielectric slab structure, wherein both the microstrip line resonator arranged on the top layer and the microstrip line resonator arranged on the bottom layer are perpendicular to the trough line resonator arranged on the public area, and the microstrip line resonator arranged on the top layer and the microstrip line resonator arranged on the bottom layer are completely consistent and symmetrical about the public area in the vertical direction. The broadband vertical transition device has broadband transmission characteristic and can achieve smoothing response of three in-band transmission poles. The broadband vertical transition device is clear in design principle, simple in structure, easy to manufacture and low in cost.

Description

technical field [0001] The present invention relates to the application of broadband and ultra-wideband communication systems, specifically a radio frequency or microwave integrated circuit designed with double-layer dielectric or multi-layer dielectric structure, especially a broadband vertical transition device. Background technique [0002] Usually for radio frequency integrated circuits and microwave integrated circuits that need to use advanced multi-layer manufacturing processes, it is very necessary to research and develop broadband vertical transitions with broadband characteristics. The vertical transition is a key component, which can be used to transfer radio frequency or microwave signals from one layer to another, and maintain almost lossless transmission in a wider frequency band. [0003] There are mainly three types of broadband vertical transitions currently developed: via-coupled transitions, cavity-coupled transitions, and slot-coupled transitions, among w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01P7/08
Inventor 祝雷杨力蔡伟华谭锦荣
Owner UNIVERSITY OF MACAU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products