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Phase change memory data writing method

A phase change memory, data writing technology, applied in the data storage field of memory, can solve the problem of not maximizing the use of energy budget and other issues

Active Publication Date: 2016-10-26
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The invention provides a data writing method of a phase change memory, which solves the problem of not maximizing the use of energy consumption budget in the existing data writing method of the phase change memory, so as to improve the writing performance and lifespan of the phase change memory (PCM)

Method used

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Embodiment Construction

[0087] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0088] Such as image 3 As shown, the chip embodiment adopted in the present invention includes memory cell array #0 to memory cell array #4, 4 row and column decoders, 4 write drivers, on-chip cache, cache row address register, multiplexer device (DMUX) and data output buffer (DOUT), 4 memory cell arrays are respectively connected to 4 row and column decoders, and the 4 row and column decoders are respectively connected to 4 write drivers, on-chip cache and multiplexer and data output The caches are serially connected in series, and each memory cell array is 2 9 row, 2 4 column memory cell matrix, consisting of 2 9 ×2 4 storage unit; a PCM chip size is 2 2 ×2 9 ×2 4 bit, the memory cell address length is (2+9+4) bits; 4 row and column decoders are used to select the row and column of the memory cell array;

[0089] The access to the storage uni...

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Abstract

A phase change memory data writing method belongs to a data storage method for a memory and solves the problem that an existing phase change memory data writing method fails to make maximum use of power budget, improving writing performance of a phase change memory (PCM) and prolonging its life. The method of the invention includes the steps of reading data, analyzing the data and writing the data. For bisymmetry in '0' writing and '1' writing delay and energy consumption of the PCM, power budge of the PCM is made full use, quantities of '0' and '1' to be modified for each data unit are recorded respectively, a writing sequence of each data unit is re-adjusted, power budget is maximally utilized, write delay of the PCM is further shortened, and thus writing performance is improved and the life is prolonged.

Description

technical field [0001] The invention belongs to a data storage method of a memory, and specifically relates to a data writing method of a phase change memory, which is suitable for building an efficient phase change memory storage system, and is suitable for enterprises and individuals who require a high-performance, low-latency non-volatile memory system Or research institutions, which have important use value. Background technique [0002] Phase Change Memory (PCM, Phase Change Memory) is a kind of chalcogenide material (GST, Ge 2 Sb 2 Te 5 ) is a new type of non-volatile memory. The dielectric material that constitutes the phase change memory will change between the amorphous state and the crystalline state under certain conditions. During this process, the amorphous state and the crystalline state show different resistance characteristics. And optical properties, therefore, can use the amorphous state and the crystalline state to represent "0" and "1" respectively to ...

Claims

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Application Information

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IPC IPC(8): G11C13/00
CPCG11C13/0069
Inventor 童薇冯丹王芳刘景宁李铮刘翔
Owner HUAZHONG UNIV OF SCI & TECH
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