Unlock instant, AI-driven research and patent intelligence for your innovation.

Polysiloxane compositions and coatings for optoelectronic applications

A composition and technology of siloxane resin, applied in the direction of coating, etc., can solve the problems of increasing manufacturing cost, not satisfying diffusion barrier layer, etc.

Active Publication Date: 2021-08-10
HONEYWELL INT INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, copper, aluminum or molybdenum interconnects require relatively thick barrier materials such as silicon nitride to prevent diffusion, which often increases manufacturing costs
However, typical planarizing materials do not meet the requirements to be effective diffusion barriers or supplementary diffusion barriers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polysiloxane compositions and coatings for optoelectronic applications
  • Polysiloxane compositions and coatings for optoelectronic applications
  • Polysiloxane compositions and coatings for optoelectronic applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0109] Example 1 - Compositions with different alkyl carbon contents

[0110] Polymer A: Phenyl TEOS was reacted in isopropanol solvent at 100° C. in the presence of acid catalyst and water for 24 h. After the reaction, the solvent was distilled off to obtain a solid polymer. The polymer was then dissolved and reprecipitated from a suitable solvent system and dried under vacuum at 50°C overnight and ground to a powder.

[0111] Polymer B: Predetermined amounts of phenyl TEOS and methyl TEOS were reacted in isopropanol solvent at 100 °C for 24 hours in the presence of acid catalyst and water and 0.5% DMDEOS. After the reaction, the solvent was distilled off to obtain a solid polymer. The polymer was then dissolved and reprecipitated from a suitable solvent system and dried under vacuum at 50°C overnight and ground to a powder.

[0112]Composition 1: 90 wt% polymer B and 10 wt% polymer A in PGMEA in the presence of 1-5 wt% surfactant and 1-5 wt% catalyst based on the final so...

Embodiment 12 and 13

[0121] Table 1: Percentage of Alkyl and Aryl Carbons

[0122]

[0123]

[0124] As shown in Table 1, compositions having greater than 20% alkyl carbons were prepared. Also as shown in Table 1, compositions having various levels of difunctional siloxane content were prepared.

Embodiment 2

[0125] Example 2 - Effect of Silicone Resin Blends on Thickness of Crack Free Films

[0126] Samples of Comparative Composition C ("Comparative Composition C") and Composition 5 ("Composition 5") as prepared in Example 1 were deposited on silicon substrates at various thicknesses, as shown in Table 2 below. shown in . Duplicate samples were then cured at 380°C for 30 minutes in a nitrogen atmosphere, followed by a second cure at 380°C for 10 minutes in air. After each cure, the film was inspected to determine if the film had ruptured. The results are provided in Table 2 below.

[0127] Table 2: Crack Results - Silicon Substrate

[0128]

[0129] As shown in Table 2, the Comparative Composition C sample had a crack threshold on silicon of about 2.3 μm. In comparison, the Composition 5 sample had a crack threshold of about 3.1 μm.

[0130] Next, samples of Comparative Composition C and Composition 5 prepared as in Example 1 were deposited on copper / silicon nitride substr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a polysiloxane composition and coatings for optoelectronic applications. A crosslinkable composition comprising a first silicone-containing resin comprising an alkyl group and an aryl group and a second silicone-containing resin comprising an aryl group. The first silicone-containing resin has a weight average molecular weight of 1000 AMU to 10,000 AMU. The second silicone-containing resin has a weight average molecular weight of 900 AMU to 5000 AMU. The composition also includes at least one solvent and at least one heat-activated catalyst.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit under Title 35, U.S.C. §119(e) of U.S. Provisional Application Serial No. 62,146,593, filed April 13, 2015, entitled "POLYSILOXANE FORMULATIONS AND COATINGS FOR OPTOELECTRONIC APPLICATIONS," the entire disclosure of which is expressly incorporated by reference Incorporated into this article. technical field [0003] The present disclosure relates generally to polysiloxane compositions and coatings made from these compositions, and more particularly to polysiloxane compositions and coatings for optoelectronic devices and applications. Background technique [0004] Polysiloxane coatings for electronic, optoelectronic, and display devices are disclosed, for example, in U.S. Patent No. 8,901,268 entitled "COMPOSITIONS, LAYERS AND FILMS FOR OPTOELECTRONIC DEVICES, METHODS OF PRODUCTION AND USES THEREOF," which is incorporated by reference The content is incorporated herein in its entiret...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09D183/04
CPCC09D183/04C08L2205/025C08L83/04C08K5/16C08G77/80C08K5/0025C08L83/00C08J3/24C08J2383/04C08J2483/04
Inventor D·瓦拉普拉萨德S·穆霍帕亚伊谢松元A·H·格布雷尔罕H·扁
Owner HONEYWELL INT INC