Laminated film type thermoelectric device and spraying preparation method thereof
A thermoelectric device and thin-film technology, which is applied in the direction of thermoelectric devices, thermoelectric device manufacturing/processing, and thermoelectric devices that only use the Peltier or Seebeck effect, can solve problems such as difficult to achieve large-scale production and efficient preparation of curved surface bonding, and achieve Simple structure, firm fit, simplified sintering effect
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specific Embodiment approach 1
[0038] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 1. A laminated thin-film thermoelectric device in this embodiment includes a substrate 110, a bottom insulating layer 109, a plurality of thermoelectric modules 100, a plurality of temporary support filling regions 107 and a top insulating layer 103 stacked in sequence. ;
[0039] The thermoelectric module 100 includes a bottom conductive layer 108, a P-type thermoelectric module 106, an N-type thermoelectric module 105 and a top conductive layer 104 stacked in sequence; the P-type thermoelectric module 106 and the N-type thermoelectric module 105 are isolated from each other The P-type thermoelectric module 106 and the N-type thermoelectric module 105 in each thermoelectric module 100 are connected through the top conductive layer 104 above the P-type thermoelectric module 106 and the N-type thermoelectric module 105, and each thermoelectric module The bottom conductive layer 108 below the P-type thermoelectric module 10...
specific Embodiment approach 2
[0042] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the material of the P-type thermoelectric module 106 includes HMS, Mg 2 Si, FeSi 2 、CoSb 3 , PbTe or the above materials doped with elements; the material of the N-type thermoelectric module 105 includes HMS, Mg 2Si, FeSi 2 、CoSb 3 , PbTe or the above materials doped with elements. Other steps and parameters are the same as those in the first embodiment.
specific Embodiment approach 3
[0043] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that: the material of the top conductive layer 104 includes copper, silver, gold, aluminum or conductive alloys of the above metals; the material of the bottom conductive layer 108 includes copper , silver, gold, aluminum or conductive alloys of the above metals. Other steps and parameters are the same as those in Embodiment 1 or 2.
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