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Overlay matching method for different lithography machines

A matching method and lithography machine technology, applied in the field of semiconductors, can solve the problems of complex operation and high cost

Inactive Publication Date: 2016-11-23
CSMC TECH FAB2 CO LTD
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Problems solved by technology

In the traditional mixing and matching process, the operation of the overlay matching process between different lithography machines is relatively complicated and the cost is high

Method used

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  • Overlay matching method for different lithography machines
  • Overlay matching method for different lithography machines
  • Overlay matching method for different lithography machines

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Embodiment Construction

[0016] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0017] An overlay matching method between different lithography machines is used to realize overlay matching between a first lithography machine and a second lithography machine. The first lithography machine and the second lithography machine may be high-end and low-end lithography equipment of the same model and different series or different types of high-end and low-end lithography equipment. In this embodiment, the first photolithography machine and the second photolithography machine are high-end and low-end photolithography equipment of different models. Wherein, the first lithography machin...

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Abstract

The invention relates to an overlay matching method for different lithography machines. The overlay matching method comprises steps as follows: a mask is provided; a mask pattern is formed on the mask and comprises overlay mark figures which are distributed at equal intervals and in a rectangular array manner; one of a first lithography machine and a second lithography machine, which has better lithography performance, is set as an initial machine, and the other lithography machine is set as a secondary machine; primary lithography figures are formed through lithography on a test wafer by the aid of the initial machine and the mask; after the mask is deviated to a certain degree relative to an alignment position, the figures on the mask are exposed to the primary lithography figures of the test wafer by the secondary machine and are developed, and secondary lithography figures are formed; overlay precision between the primary lithography figures and the secondary lithography figures is tested and parameters of the secondary machine are adjusted according to the overlay precision. The overlay matching method for different lithography machines has the advantages of being simple to operate and lower in production cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an overlay matching method between different photolithography machines. Background technique [0002] In the manufacturing process of semiconductor devices, it is usually necessary to sequentially overlap at least two or more layers of different mask patterns on the wafer. In order to ensure the conductivity of the semiconductor device, each layer pattern needs to have better overlay accuracy with other layer patterns. In the production process, considering the production cost, mix-and-match is often used to process some non-critical layers, so it is necessary to realize overlay matching between each lithography machine. Currently commonly used lithography machines include a stepper lithography machine (Stepper) and a scanning lithography machine (Scanner). Mixing and matching includes matching between high-end and low-end lithography equipment of the same type and match...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 李玉华王亚超
Owner CSMC TECH FAB2 CO LTD
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