Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor detection system based on graphene sensing unit

A technology of sensing unit and detection system, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as inapplicability, and achieve the effects of rapid detection, cost reduction, and low cost

Active Publication Date: 2018-11-27
重庆市朝盛科技有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this scheme is not applicable in some occasions that require high precision

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor detection system based on graphene sensing unit
  • Semiconductor detection system based on graphene sensing unit
  • Semiconductor detection system based on graphene sensing unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Such as figure 1 As shown, the semiconductor detection system based on the graphene sensing unit of the present invention includes: a semiconductor drive unit, a touch pressure probe horizontal drive unit, a touch pressure probe vertical drive unit, an electrical detection unit and a pressure detection unit, the semiconductor The drive unit, the touch probe horizontal drive unit and the touch probe vertical drive unit are connected in series by the drive signal line and driven sequentially, that is, the driving completion signal of the semiconductor drive unit is used as the touch probe horizontal drive unit. The drive start signal of the drive unit, the drive completion signal of the touch probe horizontal drive unit is used as the drive start signal of the touch probe vertical drive unit, and the pressure detection unit is controlled by the touch probe The driving completion signal of the vertical driving unit is used as the driving start signal, and the signal output...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In order to realize high-accuracy semiconductor detection which does not need to be provided with an auxiliary structure of a pseudo gate electrode by low cost, the invention provides a semiconductor detection system based on a graphene sensing unit. The semiconductor detection system comprises a semiconductor driving unit, a horizontal driving unit of a touch pressing probe, a vertical driving unit of the touch pressing probe, an electrical detection unit and a pressure detection unit, wherein the semiconductor driving unit, the horizontal driving unit of the touch pressing probe and the vertical driving unit of the touch pressing probe are mutually connected in series by a driving signal line and are successively driven; the pressure detection unit takes the driving finishing signal of the vertical driving unit of the touch pressing probe as an initial signal; and a signal output by the pressure detection unit is input into the electrical detection unit.

Description

technical field [0001] The present invention relates to the technical field of semiconductor detection, and more specifically, to a semiconductor detection system based on a graphene sensing unit. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor wafers are developing towards higher component density and high integration, and gates become Thinner and shorter in length than ever before. Therefore, the patterning accuracy for forming the gate is higher. In order to ensure the flatness of the surface, when forming the gate electrodes, it is preferable to form dummy gate electrodes so that the distribution of the gate electrodes is uniform. It is better to distribute dummy local interconnects when arranging via holes and local interconnect grooves, and such dummy structure regions are usually desig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/14
Inventor 刘颖
Owner 重庆市朝盛科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products