Semiconductor detection system based on graphene sensing unit

A technology of sensing unit and detection system, which is applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as inapplicability, and achieve the effects of rapid detection, cost reduction, and low cost
CN106206355BActive Publication Date: 2018-11-27重庆市朝盛科技有限公司
7 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
重庆市朝盛科技有限公司
Publication Date
2018-11-27

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

In order to realize high-accuracy semiconductor detection which does not need to be provided with an auxiliary structure of a pseudo gate electrode by low cost, the invention provides a semiconductor detection system based on a graphene sensing unit. The semiconductor detection system comprises a semiconductor driving unit, a horizontal driving unit of a touch pressing probe, a vertical driving unit of the touch pressing probe, an electrical detection unit and a pressure detection unit, wherein the semiconductor driving unit, the horizontal driving unit of the touch pressing probe and the vertical driving unit of the touch pressing probe are mutually connected in series by a driving signal line and are successively driven; the pressure detection unit takes the driving finishing signal of the vertical driving unit of the touch pressing probe as an initial signal; and a signal output by the pressure detection unit is input into the electrical detection unit.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to the technical field of semiconductor detection, and more specifically, to a semiconductor detection system based on a graphene sensing unit. Background technique

[0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor wafers are developing towards higher component density and high integration, and gates become Thinner and shorter in length than ever before. Therefore, the patterning accuracy for forming the gate is higher. In order to ensure the flatness of the surface, when forming the gate electrodes, it is preferable to form dummy gate electrodes so that the distribution of the gate electrodes is uniform. It is better to distribute dummy local interconnects when arranging via holes and local interconnect grooves, and such dummy structure regions are usually desig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More