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Lateral bipolar junction transistors (BJTs) on silicon-on-insulator (SOI) substrates

A transistor and substrate technology, applied in the field of semiconductor transistor devices, can solve problems such as difficulty in achieving high doping concentration, heavy doping of polysilicon materials, etc.

Active Publication Date: 2019-12-24
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

One concern is the difficulty in heavily doping the polysilicon material used for the extrinsic base region 36
It is difficult to achieve high doping concentrations in the extrinsic base region 36 without adversely affecting the dopants in the base region 30

Method used

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  • Lateral bipolar junction transistors (BJTs) on silicon-on-insulator (SOI) substrates
  • Lateral bipolar junction transistors (BJTs) on silicon-on-insulator (SOI) substrates
  • Lateral bipolar junction transistors (BJTs) on silicon-on-insulator (SOI) substrates

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Embodiment Construction

[0010] now refer to Figure 2 to Figure 13 , Figure 2 to Figure 13 The process steps to form the improved lateral BJT device are shown. It will be understood that the drawings do not necessarily show features drawn to scale.

[0011] figure 2 A silicon-on-insulator (SOI) semiconductor substrate 112 including a stacked semiconductor substrate 114 , an insulating layer 116 and a silicon semiconductor layer 118 is shown. The silicon semiconductor layer 118 may be doped depending on the application, or alternatively may be undoped (in which case the SOI substrate 112 is of the "fully depleted" type). For example, the semiconductor layer 118 may have a thickness of 6nm-12nm. The insulating layer 116 is generally referred to in the art as a buried oxide (BOX) layer and has a thickness of 10 nm-30 nm.

[0012] In alternative embodiments, semiconductor layer 118 may be formed of a different semiconductor material, such as silicon germanium (SiGe).

[0013] The thickness of the...

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Abstract

A bipolar transistor is supported by a substrate including a semiconductor layer overlying an insulating layer. The transistor base is formed by a base region in the semiconductor layer doped with a dopant of the first conductivity type with a first doping concentration. The transistor emitter and collector are formed from regions doped with dopants of the second conductivity type and located on opposite sides adjacent to the base region. The extrinsic base includes an epitaxial semiconductor layer in contact with the top surface of the base region. The epitaxial semiconductor layer is doped with the first conductivity type dopant at a second doping concentration greater than the first doping concentration. Sidewall spacers on each side of the extrinsic base include an oxide layer on one side of the epitaxial semiconductor layer and a top surface of the base region.

Description

technical field [0001] The present invention relates to integrated circuits, and in particular to lateral bipolar junction transistor (BJT) type semiconductor transistor devices. Background technique [0002] now refer to figure 1 , figure 1 The general configuration of a conventional lateral bipolar junction transistor (BJT) 10 device is shown. A silicon-on-insulator substrate 12 supports the transistor. Substrate 12 includes substrate layer 14 , buried oxide (BOX) layer 16 and semiconductor layer 18 . The active region 20 for the transistor device is bounded by shallow trench isolation 22 surrounding the perimeter of the penetrating layer 18 . Within the active region 20, the layer 18 is divided into a base region 30 which has been doped with dopants of the first conductivity type, an emitter region 32 which has been doped with dopants of the second conductivity type (adjacent on one side to base region 30 ) and a collector region 34 (adjacent to base region 30 on the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/735H01L29/06H01L21/331
CPCH01L29/06H01L29/6625H01L29/735H01L2924/1305H01L29/1008H01L29/42304H01L29/7317H01L21/28506H01L21/28518H01L29/0804H01L29/0821H01L29/456H01L29/66257
Inventor 柳青
Owner STMICROELECTRONICS SRL