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Semiconductor devices and fin-shaped electronic devices

A semiconductor and device technology, applied in the design field of fin field effect transistor gate-controlled diode devices

Active Publication Date: 2019-05-10
MEDIATEK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in high-density fin electronics, the problems of parasitic capacitance and self-heating become apparent

Method used

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  • Semiconductor devices and fin-shaped electronic devices
  • Semiconductor devices and fin-shaped electronic devices
  • Semiconductor devices and fin-shaped electronic devices

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0018] The following description is a preferred embodiment for implementing the present invention. The description is for the purpose of illustrating the general principles of the present invention and should not be regarded as limiting. The scope of the invention is determined with reference to the appended claims.

[0019] The present invention will be described with respect to particular embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims. The drawings described are only schematic and non-limiting. In the drawings, the size of some of the components may be exaggerated and not drawn on scale for illustrative purposes. The dimensions and relative dimensions do not correspond to actual dimensions in the present invention.

[0020] Embodiments provide semiconductor devices. The semiconductor device includes: fin field effect transistors (hereinafter referred to as finFETs) unit cells arranged as an array. The fi...

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Abstract

A semiconductor device (500a) is provided. The semiconductor device (500a) includes: a fin field effect transistor (finFET) array having a plurality of finFET cells (300a). Each of the finFET cells (300a) includes a substrate (200) with fins (204) along a first direction (400). A first metal strip pattern (210) and a second metal strip pattern (220) are formed on the fin (204) extending in a second direction (402) different from the first direction (400). First and second metal strip patterns (210, 220) are conformally formed on opposing sidewalls (207) and upper surface (205) of the fin, respectively. A first contact (212) and a second contact (214) are formed on the fin (204). First and second metal strip patterns (210, 220) are disposed between the first and second contacts (212, 214). A first dummy contact (216) is formed on the fin (204), sandwiched between the first and second metal strip patterns (210, 220).

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Application No. 62 / 003,265, filed May 27, 2014, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device, and in particular to a design for a fin field-effect transistor (finFET) gated diode device. Background technique [0004] Integrated circuit design requires a shrinkage channel length for electronics, and an increased number of input / output connections (pin count) for multi-function units. Accordingly, fin-like electronics have been developed to increase the pin access of the unit. However, in high-density fin-shaped electronic devices, the problems of parasitic capacitance and self-heating become apparent. [0005] Therefore, there is a need for a novel fin-shaped electronic device. Contents of the invention [0006] A semiconductor device is provided. An exemplary embodimen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861
CPCH01L29/785H01L27/027H01L23/535H01L27/0886
Inventor 王畅资黄柏狮
Owner MEDIATEK INC