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Manufacturing method of semiconductor device and electronic device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of high cost, restricted application, high cost of SOI substrate, etc., and achieve the effect of cost reduction

Active Publication Date: 2017-01-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although SOI technology has many incomparable advantages of bulk silicon, the preparation of SOI substrate is complicated, which makes the cost of SOI substrate higher, which directly restricts its application in the semiconductor industry.
Correspondingly, semiconductor devices using silicon-on-insulator substrates (such as radio frequency front-end devices) tend to be relatively expensive

Method used

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  • Manufacturing method of semiconductor device and electronic device
  • Manufacturing method of semiconductor device and electronic device
  • Manufacturing method of semiconductor device and electronic device

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Embodiment 1

[0056] Below, refer to Figure 1A to Figure 1E with figure 2 A method for manufacturing a semiconductor device proposed by an embodiment of the present invention will be described. in, Figure 1A to Figure 1E A cross-sectional view of a structure formed in the relevant steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention; figure 2 It is a schematic flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

[0057] Exemplarily, a method for manufacturing a semiconductor device according to an embodiment of the present invention includes the following steps:

[0058] First, if Figure 1A As shown, a first substrate 100 is provided, and a deep trench isolation structure 101 located in the first substrate 100 is formed from a first surface 1001 of the first substrate 100 .

[0059] The first substrate 100 may be a bulk silicon (bulk Si) substrate or other vario...

Embodiment 2

[0100] Another embodiment of the present invention provides an electronic device, which includes an electronic component and a semiconductor device connected to the electronic component. Wherein, the semiconductor device is a semiconductor device manufactured according to the above-mentioned manufacturing method of a semiconductor device. The electronic component can be any suitable component.

[0101] Exemplarily, the manufacturing method of the semiconductor device includes:

[0102] Step S201: providing a first substrate, forming a deep trench isolation structure in the first substrate from the first surface of the first substrate;

[0103] Step S202: forming at least one front-end device on the first substrate on the side of the first surface, forming a first dielectric capping layer covering the first surface and within the first dielectric capping layer the interconnection structure;

[0104] Step S203: providing a carrier substrate, bonding the side of the first subs...

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Abstract

The present invention provides a manufacturing method of a semiconductor device and an electronic device and belongs to the semiconductor technical field. The method includes the following steps that: a first substrate is provided, and a deep trench isolation structure in the first substrate is formed on the first surface of the first substrate; at least one front-end device located at one side of the first surface is formed on the first substrate, and a first dielectric cap layer covering the first surface and an interconnection structure located in the first dielectric cap layer are formed; a carrier substrate is provided, one side of the first substrate, which is provided with the first dielectric cap layer, is connected with the carrier substrate; the first substrate is thinned from the second surface of the first substrate which is opposite to the first surface until the first substrate is thinned to the deep trench isolation structure; and a second dielectric cap layer is formed on the second surface of the first substrate, and at least one silicon via hole is formed. According to the method of the invention, simpler and mature production technologies are adopted to realize processing for the bulk silicon substrate, so that a device structure which is basically the same as a structure using an SOI substrate can be obtained, and therefore, cost can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a semiconductor device and an electronic device. Background technique [0002] SOI (Silicon-On-Insulator, silicon on insulator) refers to the formation of a thin layer of single crystal silicon on the insulating substrate of silicon, or the thin layer of single crystal silicon is separated from the silicon substrate by an insulating layer. This structure The material can completely isolate the device from the substrate, while all devices using bulk silicon as the substrate share a substrate without any physical dielectric isolation. [0003] Compared with conventional bulk silicon technology, SOI technology has the following advantages: small parasitic effect, reduced power consumption, increased speed, high integration, enhanced radiation resistance, eliminated latch-up effect, small leakage current, and can be used for devices and circuits. Pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/76H01L21/306
CPCH01L21/30625H01L21/76
Inventor 朱继光李海艇
Owner SEMICON MFG INT (SHANGHAI) CORP