Depletion type P-type MOS transistor with convex gate electrode substrate

Abstract

The invention discloses a depletion type P-type MOS transistor with a convex gate electrode substrate. The depletion type P-type MOS transistor with the convex gate electrode substrate comprises a silicon substrate, wherein isolation regions made from silicon oxide are arranged at the two ends of the silicon substrate; a transition layer is arranged between each isolation region and the silicon substrate; a polycrystalline silicon gate is arranged in the middle of the silicon substrate; the bottom of the polycrystalline silicon gate is convex upwards; one layer of silicon dioxide is arranged between the bottom of the polycrystalline silicon gate and the silicon substrate; one layer of titanium polycrystalline compound is formed at the top of the polycrystalline silicon gate; P-type doped source region and drain region are formed between the polycrystalline silicon gate and the isolation regions and in the silicon substrate; side walls are arranged on two sides of the polycrystalline silicon gate; a P-type doped layer for connecting the source region with the drain region is formed at the bottom of the polycrystalline silicon gate and in the silicon substrate. In the depletion type P-type MOS transistor with the convex gate electrode substrate, the gate electrode substrate is convex upwards and can control on-off of a circuit on the two sides of the circuit. According to the design, circuit control can be greatly improved, leakage current can be reduced and the gate length of the transistor can be greatly shortened.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a P-type MOS transistor with a protruding depletion gate substrate. Background technique [0002] In the prior art, the size of the MOS transistor is getting smaller and smaller. If the size of the depletion-type P-type MOS transistor is too small, the gate control current of the transistor is also very small, which is not easy to adjust, and the control accuracy is poor. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the invention discloses a P-type MOS transistor with a protruding depletion gate substrate. [0004] Technical scheme of the present invention is as follows: [0005] A P-type MOS tube with a depletion gate substrate protruding, including a silicon substrate; two ends of the silicon substrate are isolation regions made of silicon oxide; the isolation region and the silicon substrate There is a transition layer in b...

AI Technical Summary

Problems solved by technology

[0002] In the prior art, the size of the MOS transistor is getting smaller and smaller. If the size of the depletion-type P-type MOS transistor is too small, the gate control current of the transistor is also very small, which is not easy to adjust, and the control accuracy is very poor.

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