Alignment accuracy compensation method and device

A technology of overlay accuracy and compensation method, which is applied in the field of semiconductor photolithography technology, can solve problems such as large OVL offset, and achieve the effect of high overlay accuracy

Active Publication Date: 2017-01-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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  • Claims
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Problems solved by technology

However, the APC system currently only feeds back the results of one layer of OVL, which will cause a larger offset to the OVL of the previous layer

Method used

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  • Alignment accuracy compensation method and device

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Embodiment Construction

[0024] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0025] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0026] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the / the" are intended to include...

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Abstract

The invention provides an alignment accuracy compensation method and device. The alignment accuracy compensation method comprises the steps of measuring first alignment accuracy of a current layer of lithography pattern and a previous layer of lithography pattern; measuring second alignment accuracy of the previous layer of lithography pattern and a more previous layer of lithography pattern; and calculating an error in the technical process on the basis of the first alignment accuracy and the second alignment accuracy for feeding the error into an exposure machine system. According to the alignment accuracy compensation method and device provided by the invention, by adopting the alignment accuracy among multiple layers as feedback, a dual damascene process window can be improved and higher alignment accuracy can be obtained for a dual damascene process.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography technology, in particular to an overlay accuracy (overlay, OVL) compensation method and device. Background technique [0002] With the rapid development of the integrated circuit manufacturing industry, the lithographic imaging technology continues to improve, and the feature size of the chip is also continuously reduced, which has higher requirements for overlay accuracy. Overlay accuracy is one of the important performance indicators of modern high-precision step-and-scan projection lithography machines, and it is also an important part of new lithography technology that needs to be considered. Overlay accuracy will seriously affect product yield and performance. Improving the overlay accuracy of the lithography machine is also the key to determining the minimum unit size. [0003] Specifically, the overlay accuracy is the overlay position accuracy of the pattern on the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 张强邢滨
Owner SEMICON MFG INT (SHANGHAI) CORP
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