Overlay precision correction method

A technology of overlay accuracy and overlay error, which is applied in microlithography exposure equipment, optics, instruments, etc., and can solve the problem of large overlay error
CN110531591AActive Publication Date: 2019-12-03SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2019-12-03

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Abstract

The invention provides an overlay precision correction method. The method comprises the following steps of providing a mask plate on which a mask plate pattern and a cutting channel forming region areformed, and arranging at least eight pairs of alignment marks in the cutting channel forming region; exposing the mask plate by using an exposure machine bench; collecting all alignment mark data inan exposure region; acquiring overlay error data in the exposure region according to the alignment mark data; and adjusting photoetching parameters of the exposure machine bench according to the overlay error data so as to correct overlay precision. The at least eight pairs of alignment marks are arranged in the cutting channel forming region to obtain the overlay error data in the exposure regionso as to introduce a correction amount of a high-order number, and high-order correction in the exposure region can be realized on the basis of linear correction so that the overlay errors are reduced, and overlay precision is improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an overlay accuracy correction method. Background technique

[0002] As the size of semiconductor devices continues to shrink, devices have higher requirements for overlay alignment. In the current correction of overlay accuracy, for the dielectric layer that needs to be ion implanted or etched, in the exposure area, the mask There is only a pair of alignment marks on the plate and the medium layer. The correction obtained by the alignment marks can only be a linear correction, and the smaller units inside the exposure area cannot be corrected. The ordinary linear correction of the exposure machine cannot be very fast. Correct the error between the actual grid and the ideal grid.

[0003] At present, the usual practice in this field is to rely on the results of overlay error measurement to correct the inside of the exposure area, and feed the compensation dat...

Claims

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