Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of super junction power device and super junction power device

A technology for power devices and power units, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. It can solve the problems of large breakdown voltage variation, large static power consumption, and high sensitivity, and achieve low on-resistance. , low sensitivity, the effect of improving usability and reliability

Inactive Publication Date: 2020-10-16
PEKING UNIV FOUNDER GRP CO LTD +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] (1) The on-resistance of super-junction power devices with low doping concentration is large, which leads to large static power consumption;
[0004] (2) Super junction power devices with high doping concentration are highly sensitive to charge imbalance, which leads to large changes in their breakdown voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of super junction power device and super junction power device
  • Preparation method of super junction power device and super junction power device
  • Preparation method of super junction power device and super junction power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Figure 1 to Figure 4 The device structures and their corresponding numbered names are: 1 substrate, 2 first epitaxial layer, 3 second epitaxial layer, 4 third epitaxial layer, 5 fourth epitaxial layer.

[0036] Such as figure 1 As shown, a first epitaxial layer 2 and a second epitaxial layer 3 are formed on a substrate 1 .

[0037] Such as figure 2 As shown, the first epitaxial layer 2 and the second epitaxial layer 3 are etched to form trenches, the bottom of which is the surface layer of the substrate 1 .

[0038] Such as image 3 As shown, the third epitaxial layer 4 is formed in the trench, wherein the horizontal position and thickness of the third epitaxial layer and the first epitaxial layer are consistent, and the first epitaxial layer 2 and the third epitaxial layer 4 also constitute the first epitaxial layer 2. Super junction power unit.

[0039] Such as Figure 4 As shown, the fourth epitaxial layer 5 is continuously formed in the trench, wherein the h...

Embodiment 2

[0041] Such as Figure 1 to Figure 5 As shown, the method for manufacturing a super junction power device according to an embodiment of the present invention includes: step 502, forming a first epitaxial layer 2 and a second epitaxial layer 3 on a substrate 1 in sequence; A trench perpendicular to the substrate 1 is formed in the epitaxial layer 2 and the second epitaxial layer 3, and the depth of the trench is equal to the sum of the thicknesses of the first epitaxial layer 2 and the second epitaxial layer 3 ; Step 506, forming a third epitaxial layer 4 in the groove corresponding to the first epitaxial layer 2, the thickness of the first epitaxial layer 2 is consistent with the thickness of the third epitaxial layer 4, to form a first-level super junction power unit; step 508, forming a fourth epitaxial layer 5 above the third epitaxial layer 4, the thickness of the second epitaxial layer 3 is consistent with the thickness of the fourth epitaxial layer 5, so as to form a sec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a super-junction power device manufacturing method and a super-junction power device. The above manufacturing method comprises steps: a first epitaxial layer and a second epitaxial layer are sequentially formed on a substrate; a groove vertical to the substrate is formed in the first epitaxial layer and the second epitaxial layer, wherein the depth of the groove is the sum of thicknesses of the first epitaxial layer and the second epitaxial layer; a third epitaxial layer is formed in the groove corresponding to the first epitaxial layer, the thickness of the first epitaxial layer is consistent with that of the third epitaxial layer, and a first-level super-junction power unit is formed; a fourth epitaxial layer is formed above the third epitaxial layer, the thickness of the second epitaxial layer is consistent with that of the fourth epitaxial layer, and a second-level super-junction power unit is formed, and the super-junction power device manufacturing process is further completed. Through the technical scheme of the invention, the super-junction power device with a super-junction structure compatible with two doping concentrations is formed, demands on low on-state resistance can be met, and demands on low sensitivity of charge imbalance can also be met.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a preparation method of a super junction power device and a super junction power device. Background technique [0002] At present, in related technologies, super junction power devices are widely used in semiconductor device products due to their high breakdown voltage and low conduction characteristics. However, with the continuous development of semiconductor processing technology, super junction power devices still exist The following defects: [0003] (1) The on-resistance of super-junction power devices with low doping concentration is large, which leads to large static power consumption; [0004] (2) The super junction power device with high doping concentration is highly sensitive to charge imbalance, which leads to a large variation of its breakdown voltage. [0005] Therefore, how to design a super junction power device to simultaneously ensure high sensitivity ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L29/06H01L29/36
CPCH01L29/0684H01L29/36H01L29/66007
Inventor 李理马万里赵圣哲
Owner PEKING UNIV FOUNDER GRP CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com