Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for spherical nano-silicon dioxide

A technology of nano silicon dioxide and silicon dioxide, applied in the direction of silicon dioxide, silicon oxide, nanotechnology, etc., can solve the problem of low yield of nano silicon dioxide

Active Publication Date: 2017-01-25
ZHEJIANG HUAFEI ELECTRONICS BASE MATERIAL
View PDF6 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the very low problem of the productive rate of nanometer silicon dioxide that exists in the above-mentioned prior art, the present invention aims to provide a kind of preparation method of spherical nanometer silicon dioxide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for spherical nano-silicon dioxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] S1, provide natural quartz powder with a particle size of 10 μm.

[0024] S2, using natural gas and oxygen to generate flames to form a flame field, along the conveying direction of natural quartz powder, the flame field includes a first flame field with a temperature between 1700-2000°C and a second flame field with a temperature between 2300-2600°C , the natural quartz powder is vertically injected into the flame field and melted in the first flame field to form molten liquid quartz particles, and the molten liquid quartz particles are in the high temperature condition exceeding the gasification point temperature and the high-speed downward high temperature in the second flame field Under the action of air flow, the surface of molten liquid quartz particles evaporates to form nanoscale vapors. Wherein, the length of the first flame field is 2m, and the length of the second flame field is 0.5m.

[0025] S3, rapid cooling and shaping. 2000m 3 / h of air is used for va...

Embodiment 2

[0029] S1, provide fused silica with a particle size of 5 μm.

[0030] S2, using natural gas and oxygen to generate a flame to form a flame field, along the conveying direction of the silica particles, the flame field includes a first flame field with a temperature between 1700-2000°C and a second flame with a temperature between 2300-2500°C Silica particles are injected vertically into the flame field and melted into liquid spherical particles in the first flame field. The molten liquid quartz particles are in the high temperature condition exceeding the gasification point temperature and the high-speed downward motion in the second flame field. Under the action of high-temperature air flow, the surface of molten liquid quartz particles evaporates to form nanoscale vapors. Wherein, the length of the first flame field is 3m, and the length of the second flame field is 1.5m.

[0031] S3, rapid cooling and shaping. 3000m 3 / h of air is used for vapor dispersion, cooling, and ...

Embodiment 3

[0035] S1, providing silica particles with a particle size of 3 μm.

[0036] S2, using natural gas and oxygen to generate flames to form a flame field, along the conveying direction of silica particles, the flame field includes a first flame field with a temperature between 1700-2000°C and a second flame with a temperature between 2300-2600°C In the second flame field, the silicon dioxide particles are sprayed vertically into the flame field and melted to form spherical liquid quartz particles in the first flame field. Under the action of high-temperature air flow, the surface of molten liquid quartz particles evaporates to form nano-scale vapors. Wherein, the length of the first flame field is 3m, and the length of the second flame field is 1.2m.

[0037] S3, rapid cooling and shaping. 2500m 3 / h of air is used for vapor dispersion, cooling, and diversion. In addition, cooling water flowing through the jacketed furnace walls is used for cooling. To ensure that the temper...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method for spherical nano-silicon dioxide. The method comprises the following steps: supplying silicon dioxide grains with grain size not more than 50mu m; utilizing natural gas and oxygen to generate flame and form flame fields, wherein the silicon dioxide grains are fused in a first flame field at 1700-2000 DEG C to form liquid particles, and the silicon dioxide liquid particles are evaporated in a second flame field at 2300-2600 DEG C higher than the vaporization point of silicon dioxide through liquid particle surface to form nanoscale vaporized matter; quickly cooling and forming, wherein an air cooling system is arranged in an annular tangent air-feeding system in a cooling furnace along a conveying direction of the nanoscale vaporized matter; forming some particles in the vaporized matter into micron-scale and submicron-scale solid spherical particles and forming the rest particles into mono-dispersed nano-spherical particles; grading silicon dioxide grains in different grain sizes. The yield of nano-silicon dioxide prepared according to the method can reach up to 3%-10%.

Description

technical field [0001] The invention relates to the preparation of spherical silicon dioxide, more particularly to a method for preparing spherical nano silicon dioxide. Background technique [0002] Silica is often used as a filler and in packaging integrated circuits. When the content of spherical silica contained in the filler of the molding compound is higher, its filling, fluidity and insulating properties will be improved, and finally the thermal conductivity and mechanical strength of the packaged device will be improved, and the packaged device will be reduced. Thermal expansion rate and moisture absorption rate reduce damage to integrated circuits during packaging. Therefore, spherical silica is often used as a filler in high-end molding compounds. [0003] Patent application CN200810121382.8 discloses a preparation method of spherical silica, using natural gas and oxygen to generate a flame, so that angular silica is melted by the flame, forming a spherical shape...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/12B82Y40/00
CPCB82Y40/00C01B33/12C01P2004/32
Inventor 李文陈树真敖洲陈晓飞沈家源陈淑艳
Owner ZHEJIANG HUAFEI ELECTRONICS BASE MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com