Open structure, manufacturing method thereof and interconnect structure

Abstract

The invention provides a manufacturing method of an open structure. The manufacturing method includes the steps of forming a multi-layer structure on a substrate, wherein the multi-layer structure comprises conductor layers and first dielectric layers which are stacked alternately, and the conductor layers in a first region are lower than the conductor layers in a second region; forming second dielectric layers covering the multi-layer structure; forming patterned mask layers on the second dielectric layers; forming first fill-in layers in the second region, wherein the first fill-in layers cover the second dielectric layers exposed over the patterned mask layers; taking the first fill-in layers and the patterned mask layers as masks to form a plurality of first openings of the conductor layers exposed over the first region; removing the first fill-in layers; forming second fill-in layers for filling the first openings; taking the second fill-in layers and the patterned mask layers as masks to form a plurality of second openings of the conductor layers exposed over the second region. The invention further provides the opening structure and an interconnect structure.

Description

technical field [0001] The present invention relates to an opening structure, a manufacturing method thereof, and an interconnection structure, and in particular to an opening structure applicable to a three-dimensional semiconductor element, a manufacturing method thereof, and an interconnection structure. Background technique [0002] With the integration of semiconductor components, in order to achieve the goal of high density and high performance, it has become a trend to develop into three-dimensional space within a limited unit area. Common three-dimensional semiconductor elements such as three-dimensional NAND flash memory (3D-NAND flash memory) in non-volatile memory. [0003] Taking the multi-layer device of the three-dimensional NAND flash memory as an example, the stepped multi-layer pad structure enables the contact windows to be respectively connected to different film layers in the multi-layer device. Since the aspect ratios of the shallowest and deepest conta...

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Problems solved by technology

[0005] In this way, since the thickness of the etch stop layer is greatly increased, the space of the contact window will be compressed and the process window will be reduced, so that the contact window and the pad cannot be effectively connected.

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