Semiconductor wafer notch groove crystal orientation measuring device and use method

Abstract

The invention relates to a semiconductor wafer notch groove crystal orientation measuring device and a use method. An X-ray orientation instrument is used; a plurality of through threaded holes which are formed in a round work table of the X-ray orientation instrument and are provided with grooves are positioning post holes; the circular center is one point of a circle using a connecting line of the X-ray measuring point to the measuring table circle center as the reference line, using anticlockwise rotation of 90 degrees of the outer circle as the angle and using D-r as the radius on the round work table, wherein the D is the radius of a tested wafer; the r is the radius of a notch groove positioning post; each notch groove positioning post is fixed in the corresponding positioning post hole; the tested semiconductor wafer is put on the work table, the notch groove notch position is put in the positioning post position and is clamped; an optical grating is turned on; a power supply switch is switched on; a work table rotating shaft shakes until a pointer of an ammeter reaches the maximum value; the notch groove crystal orientation position is shown. The device and the method provided by the invention have the technical effects that the structure is simple; the operation is convenient; the measurement is accurate; the efficiency is high; the wafer edge damage due to excessive contact with instrument metal components in the measuring process can be avoided.

Description

technical field [0001] The invention relates to a semiconductor wafer crystal orientation detection device and a use method, in particular to a semiconductor wafer notch groove crystal orientation measurement device and a use method. Background technique [0002] The existing semiconductor wafer notch groove crystal orientation measurement method is generally to manually rotate the wafer until the crystal orientation is detected in its interval, and when the X-ray orientation instrument pointer current reaches the maximum value, the crystal orientation at this time is read as the notch groove crystal orientation. It is labor-intensive and time-consuming, with low efficiency and high damage rate at the edge of the wafer. Contents of the invention [0003] Aiming at the deficiencies of the existing measurement methods, the present invention provides a device for measuring the crystal direction of notch grooves of semiconductor wafers. The specific technical solution is that ...

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Problems solved by technology

[0002] The existing semiconductor wafer notch groove crystal orientation measurement method is generally to manually rotate the wafer until the crystal orientation is detected in its interval, and when the X-ray orientation instrument pointer current reaches the maximum value, the crystal orientation at this time is read as the notch groove crystal orientation. Time-consuming, low efficiency and high damage rate at the edge of the wafer

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