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A Method for Extracting Thermal Expansion Coefficient of Polysilicon Thin Film Based on Resonant Characteristics

A technology of polysilicon thin film and thermal expansion coefficient, which is applied in the direction of material thermal expansion coefficient, can solve the problems of inability to provide material parameter data, unsuitable for application, etc., and achieve the effect of fast measurement speed, convenient operation and high measurement accuracy

Active Publication Date: 2019-03-22
HOHAI UNIV
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Problems solved by technology

[0004] Most of the commonly used test methods for the thermal expansion coefficient of polysilicon thin films require a vacuum environment, which is not suitable for application on the actual process line. There are also some test methods that can only measure the thermal expansion coefficient at a specific temperature or at a lower temperature, and cannot provide complete material parameters. data

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  • A Method for Extracting Thermal Expansion Coefficient of Polysilicon Thin Film Based on Resonant Characteristics
  • A Method for Extracting Thermal Expansion Coefficient of Polysilicon Thin Film Based on Resonant Characteristics
  • A Method for Extracting Thermal Expansion Coefficient of Polysilicon Thin Film Based on Resonant Characteristics

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0026] The test structure of the double-end fixed beam in the thermoelectric analysis method in the prior art is as follows: Figures 1 to 4 As shown, the double-end fixed beam is made of polysilicon material, and a metal electrode is provided on the anchorage area at the end of the double-end fixed beam, and a lower electrode is provided at the lower end of the double-ended fixed beam. Used to apply electrical excitation and conduct electrical detection. The cantilever beam test structure such as Figures 5 to 6 As shown, the cantilever beam is also made of polysilicon material, and a metal electrode is provided on the anchor area at the end of the cantilever beam, and a lower electrode is pr...

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Abstract

The invention discloses a method for extracting thermal expansion coefficients of a polycrystalline silicon film based on resonance characteristics. Based on a test structure of a first double-clamped beam, a second double-clamped beam and a cantilever, the widths and the thicknesses of the first double-clamped beam, the second double-clamped beam and the cantilever are same and only the lengths are different. According to the method, the double-clamped beams are heated by using direct current, and the thermal expansion coefficients of the polycrystalline silicon film are calculated by measuring the transient resistance characteristics of the double-clamped beams during heating, the mechanical resonance characteristics of the double-clamped beams before and after heating, and the mechanical resonance characteristics of the cantilever at a normal temperature. The test method provided by the invention is convenient to operate, simple in test structure, and accurate in measurement result, does not need a vacuum environment, and can measure the thermal expansion coefficients of the polycrystalline silicon film at different temperatures.

Description

technical field [0001] The invention relates to a method for measuring the thermal expansion coefficient of a polysilicon film, in particular to a method for extracting the thermal expansion coefficient of a polysilicon film based on the mechanical resonance characteristics of a double-end fixed-supported beam, belonging to the technical field of microelectronic mechanical systems. Background technique [0002] Micro-Electro-Mechanical System (MEMS, Micro-Electro-Mechanical System) is a frontier research field developed on the basis of microelectronic technology. Its basic characteristics are miniaturization, high integration and high-precision batch manufacturing. MEMS devices such as sensors, actuators, and microstructures manufactured by MEMS technology have the advantages of small size, light weight, stable performance, low cost, and mass production. With the development of technology, MEMS devices are adopted by more and more application fields. [0003] Polysilicon f...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N25/16
CPCG01N25/16
Inventor 刘海韵陈嘉琪郭洁王娴珏
Owner HOHAI UNIV
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