Method and device for improving reliability of NAND FLASH

A reliability and controller technology, applied in static memory, instruments, information storage, etc., can solve problems such as file data anomalies, file system original data anomalies, data loss, etc., to avoid damage, ensure data reliability, and achieve difficulty little effect

Inactive Publication Date: 2017-02-15
FUJIAN LANDI COMML EQUIP CO LTD
View PDF1 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the content of a valid data page in the file system partition is illegal, it may cause a certain file data anomaly, resulting in data loss, or the original data of the file system is abnormal, causing the partition to fail to mount the file system normally, resulting in the entire partition being inaccessible

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for improving reliability of NAND FLASH

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to describe the technical content, achieved goals and effects of the present invention in detail, the following descriptions will be made in conjunction with the embodiments and accompanying drawings.

[0022] NAND FLASH: A non-volatile flash memory technology that uses a non-linear macro-cell mode internally, providing a cheap and effective solution for the realization of solid-state large-capacity memory. It has the advantages of large capacity and fast rewriting speed, and is suitable for the storage of large amounts of data.

[0023] NOR FLASH: A non-volatile flash memory technology with fast read speed, slow rewrite speed and small capacity.

[0024] Erase: Change all data bits of a block / sector in FLASH to 1. NAND FLASH erases in units of blocks, and a block contains multiple pages.

[0025] Programming: Change some data bits of a page / byte in FLASH to 0, and NAND FLASH programming takes pages as units.

[0026] UBI: The logical volume management layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of flash memories, in particular to a method and device for improving the reliability of an NAND FLASH. The method comprises the following steps of judging the type of a current operation of the NAND FLASH after an NAND controller receives an interrupt signal; if the current operation is a programming operation, completing the programming operation by using a capacitor, resetting the NAND FLASH through an NAND FLASH controller and finishing the current ongoing operation; and if the current operation is not the programming operation, resetting the NAND FLASH through the NAND FLASH controller and finishing the current ongoing operation. The method and the device have the beneficial effects that a key operation-programming operation which needs to be protected after a power failure is caught; the damage of the power failure to NAND FLASH data is effectively avoided through ensuring that the whole programming operation is completed in the power failure; and the data reliability of using an NAND FLASH terminal is ensured.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to a method and device for improving the reliability of NAND FLASH. Background technique [0002] Because NAND FLASH has the advantages of large capacity, low cost, and fast rewriting speed, it has gradually been used in embedded devices such as payment terminals, car navigation, industrial control equipment, and set-top boxes, replacing the status of storage devices such as NOR FLASH. However, the reliability of NAND FLASH is not as good as that of previous storage devices, and with the improvement of technology, the reliability continues to decline. [0003] The lower reliability of NANDFLASH is especially manifested when the terminal is powered off. Power failure during erasing or programming will cause the data in the corresponding area to be in an unstable state, which will cause errors in the data stored in the terminal, and even cause the terminal to be unusable. [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/14G11C16/10
CPCG11C5/14G11C5/148G11C16/10
Inventor 吴旋
Owner FUJIAN LANDI COMML EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products