Thin-film transistor and display unit

Abstract

The invention provides a thin-film transistor, which comprises a source electrode, a drain electrode, a substrate and a semiconductor thin-film layer coated on the substrate, and is characterized in that the semiconductor thin-film layer is plated with a first metal layer and a second metal layer which are not mutually contacted, the first metal layer is connected to a first metal lead, the second metal layer is connected to a second metal lead, and the first metal lead and the second metal lead are connected to form a grid electrode. The invention further provides a display unit. According to the invention, an original metal layer of the grid electrode is separated into the first metal layer and the second metal layer, thereby enabling the resistance of an equivalent resistor to be smaller, and being capable of effectively increasing on-state current and reducing leakage current. In addition, the thin-film transistor does not need to change manufacturing procedures of a console, thereby being easy to improve and use.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a display unit. Background technique [0002] Thin film transistor structures such as Figure 5 As shown, although the on-state current shown in the figure is relatively large, its leakage current is also relatively large. The field pursues a large on-state current, a small leakage current, and the thickness of the metal wire to reduce the resistance, so that the above two The current value is a compromise. The existing technology reduces the resistance by increasing the thickness of the semiconductor insulating layer to reduce the leakage current, but the increase of the film thickness is limited by the machine, and the film thickness increases to a certain extent, and the uniformity will be poor. Therefore, a new thin film transistor structure is needed to reduce the resistance of the semiconductor insulating layer without changing the original manuf...

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Problems solved by technology

[0002] Thin film transistor structures such as Figure 5 As shown, although the on-state current shown in the figure is relatively large, its leakage current is also relatively large. The field pursues a large on-state current, a small leakage current, and the thickness of the metal wire to reduce the resistance, so that the above two The current value is a compromise. The existing technology reduces the resistance by increasing the thickness of the semiconductor insulating layer to reduce the leakage current, but the increase of the film thickness is limited by the machine, and the film thickness increases to a certain extent, and the uniformity will be poor. Therefore, a new thin film transistor structure is needed to reduce the resistance of the semiconductor insulating layer without changing the original process, thereby reducing the leakage current

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