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30results about How to "No process changes required" patented technology

Fuel cell membrane electrode CCM with high-temperature-resistant and self-humidifying characteristics

InactiveCN112768708AAbility to achieve water balanceAdd binding sitesCell electrodesFuel cellsPtru catalystSide chain
The invention discloses a preparation method of a fuel cell membrane electrode CCM. The method comprises the following steps: preparing a hydrophilic catalyst, a perfluorosulfonic acid resin solution and a dispersing agent into a slurry with uniform components in a dispersing manner, and transferring the slurry to two sides of a proton exchange membrane to obtain the fuel cell membrane electrode CCM, wherein the EW value of the proton exchange membrane is 700 to 900; and the EW value of the perfluorinated sulfonic acid resin is 700 to 800; The hydrophilic catalyst and a short-side-chain low-EW-value resin are adopted, binding sites of water are increased so that the affinity of the catalyst layer to water is improved, a rich proton transmission network structure is constructed, the proton conduction rate of the catalyst layer is increased, the proton exchange membrane with a high water conduction capacity is adopted, the diffusion capacity of water generated by a cathode to an anode is enhanced, and a self water balance capability of the MEA under the condition that external humidification is not performed is realized. The whole preparation process does not introduce additional substances, does not need to change a membrane electrode preparation process flow, and is easy to popularize and apply.
Owner:SUNRISE POWER CO LTD

GaAs-based pHEMT device and preparation method therefor

The invention provides a GaAs-based pHEMT device and a preparation method therefor. The device comprises a GaAs substrate, a buffer layer, a first AlGaAs barrier layer, an InGaAs channel layer, a second AlGaAs barrier layer and a N<+>-GaAs layer. The channel layer and two barrier layers form two-dimensional electron gases respectively. A source electrode and a drain electrode are formed on the N<+>-GaAs layer. A recessed groove exposed from the second AlGaAs barrier layer is arranged between the source electrode and the drain electrode. A grid electrode is formed in the recessed groove. A nodal region with a high dielectric constant is arranged in a recessed groove between the grid electrode and the drain electrode. The nodal region with a high dielectric constant is embedded from the upper surface of the second AlGaAs barrier layer and extends into the interior. The distance of the source electrode to the grid electrode is equal to the distance of the drain electrode to the grid electrode. The transverse width of the recessed groove between the grid electrode and the drain electrode is more than the transverse width of the recessed groove between the grid electrode and the source electrode. The grid-drain breakdown voltage can be raised under a condition that device performances are not affected.
Owner:CHENGDU HIWAFER SEMICON CO LTD

Preparation method of oxidation-biodegradable shopping bag

The invention belongs to the technical field of degradable plastic and in particular relates to a preparation method of an oxidation-biodegradable shopping bag. The oxidation-biodegradable shopping bag is prepared from the following raw material components: a resin additive, a degradable master batch and a filling agent; the oxidation-biodegradable shopping bag is prepared from the raw material components in percentage by mass: 87 percent to 96 percent of the resin additive, 3.0 percent to 10 percent of the degradable master batch and 1.0 percent to 3.0 percent of the filling agent; a preparation process is simple, and production equipment and a production process do not need to be changed; the oxidation-biodegradable shopping bag can be recycled and waste materials are not generated; toxic substances are not generated in production, storage, utilization and degradation processes; original performance of a product is not influenced; the productivity is improved; especially, the productivity of thin film and sheet material products is improved; the thickness can be properly reduced when mechanical properties are the same; the raw materials adopt conventional materials and a natural modifier; compared with energy source investment of competitive products or directly-biodegradable products, the energy source investment of the oxidation-biodegradable shopping bag is the lowest and the energy consumption of other products is 3 times as much as that of the oxidation-biodegradable shopping bag; few polymers are used so that natural resources are ensured; the waste materials are reduced; in a composting process, nutrients are easily supplemented and the value of useful humus soil is not influenced.
Owner:昆明鑫鑫大壮降解塑料技术有限公司

Preparation method of oxidized biodegradable mulching film

The invention belongs to the technical field of degradable plastics, and specifically relates to a preparation method of an oxidized biodegradable mulching film. The oxidized biodegradable mulching film is prepared from a resin additive and a degradable master batch, wherein the raw material components in mass percent are as follows: 98-99.8% of the resin additive and 0.2-2.0% of the degradable master batch. According to the preparation method of the oxidized biodegradable mulching film, the preparation process is simple without the need of changing the production equipment and process; the mulching film can be recovered without generating waste; no toxic substance is generated in the processes of production, storage, use and degradation; the inherent properties of the products are unaffected; the productivity is increased especially for film and sheet products; the thickness of the film can be appropriately reduced under the condition of the same mechanics properties; the raw materials adopt general materials and natural modifiers; the energy source investment is the lowest compared with compatible products or directly biodegradable products, because the energy consumption of other products is as high as 3 times of the oxidized biodegradable mulching film; less polymers are used and natural resources are guaranteed; waste is reduced; and supplement nutrition is benefited in composting without influencing the value of available humus soil.
Owner:昆明鑫鑫大壮降解塑料技术有限公司

Backlight module preparation method and device

The embodiment of the invention provides a backlight module preparation method and device. The backlight module preparation method comprises the steps of acquiring a target color saturation visual angle of a display module; wherein a display module comprises a liquid crystal display panel and a backlight module; obtaining a target backlight brightness view angle corresponding to the target color saturation view angle according to the target color saturation view angle, and preparing a backlight module according to the target backlight brightness view angle; when the color saturation visual angle of the liquid crystal display panel needs to be changed; obtaining target color saturation viewing angle, obtaining a target backlight brightness visual angle according to the target color saturation visual angle. The target backlight brightness visual angle is obtained, and then the backlight module is prepared according to the target backlight brightness visual angle, so that the color saturation visual angle can be changed and the color cast can be improved by changing the backlight brightness visual angle in the backlight module, the manufacturing process of the display panel does not need to be changed, and the technical problems of complex manufacturing process and relatively low yield of an existing VA type liquid crystal display panel improvement method are solved.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Backlight module preparation method and device

The embodiment of the present application provides a backlight module preparation method and device, the backlight module preparation method includes obtaining the target color saturation viewing angle of the display module; the display module includes a liquid crystal display panel and a backlight module; according to the Target color saturation viewing angle, obtain the target backlight brightness viewing angle corresponding to the target color saturation viewing angle, prepare a backlight module according to the target backlight brightness viewing angle; when the liquid crystal display panel needs to change the color saturation viewing angle, obtain the target color saturation degree viewing angle, and then obtain the target backlight brightness viewing angle according to the target color saturation viewing angle, and then prepare a backlight module according to the target backlight brightness viewing angle, so that by changing the backlight brightness viewing angle in the backlight module, the color saturation viewing angle can be changed, and the color saturation can be improved. It does not need to change the manufacturing process of the display panel, and solves the technical problems of complex manufacturing process and low yield rate in the existing improvement method of VA-type liquid crystal display panel.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Gaas-based phemt device and preparation method thereof

The invention provides a GaAs-based pHEMT device and a preparation method therefor. The device comprises a GaAs substrate, a buffer layer, a first AlGaAs barrier layer, an InGaAs channel layer, a second AlGaAs barrier layer and a N<+>-GaAs layer. The channel layer and two barrier layers form two-dimensional electron gases respectively. A source electrode and a drain electrode are formed on the N<+>-GaAs layer. A recessed groove exposed from the second AlGaAs barrier layer is arranged between the source electrode and the drain electrode. A grid electrode is formed in the recessed groove. A nodal region with a high dielectric constant is arranged in a recessed groove between the grid electrode and the drain electrode. The nodal region with a high dielectric constant is embedded from the upper surface of the second AlGaAs barrier layer and extends into the interior. The distance of the source electrode to the grid electrode is equal to the distance of the drain electrode to the grid electrode. The transverse width of the recessed groove between the grid electrode and the drain electrode is more than the transverse width of the recessed groove between the grid electrode and the source electrode. The grid-drain breakdown voltage can be raised under a condition that device performances are not affected.
Owner:CHENGDU HIWAFER SEMICON CO LTD
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